IS45LV44002B

IS45LV44002B 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES Extended Data-Out (EDO) Page Mode access cycle TTL compatible inputs and outputs Refresh Interval: – 2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 3.3V ± 10% Byte Write and Byte Read operation via two CAS Automotive Temperature Range Option A1: -40°C to +85°C Lead-free available www.DataSheet4U.com ISSI ® SEPTEMBER 2005 DESCRIPTION The ISSI IS45LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. These features make the IS45LV44002B ideally suited for high-bandwidth graphics, digital signal processing, highperformance computing systems, and peripheral applications. The IS45LV44002B is packaged in a 24-pin 300-mil SOJ with JEDEC standard pinouts. PRODUCT SERIES OVERVIEW Part No. IS45LV44002B Refresh 2K Voltage 3.3V ± 10% KEY TIMING PARAMETERS Parameter RAS Access Time (tRAC) CAS Access Time (tCAC) Column Address Access Time (tAA) EDO Page Mode Cycle Time (tPC) Read/Write Cycle Time (tRC) -50 50 13 25 20 84 Unit ns ns ns ns ns PIN CONFIGURATION: 24-pin SOJ VDD I/O0 I/O1 WE RAS NC A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 GND I/O3 I/O2 CAS OE A9 A8 A7 A6 A5 A4 GND PIN DESCRIPTIONS...