Middle Power MOSFET
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2.5V Drive Nch MOSFET
RTR030N05
zStructure Silicon N-channel MOSFET zDimensions (Unit : mm)
TSMT3
1...
Description
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2.5V Drive Nch MOSFET
RTR030N05
zStructure Silicon N-channel MOSFET zDimensions (Unit : mm)
TSMT3
1.0MAX 2.9 0.4
(3)
0.85 0.7
zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).
(1) Gate (2) Source (3) Drain
1.6 2.8
0~0.1
(1)
(2)
0.95 0.95 1.9 0.16
Each lead has same dimensions Abbreviated symbol : PV
zApplication Switching
zInner circuit
(3)
∗2
zPackaging specifications
Package Type RTR030N05 Code Basic ordering unit (pieces) Taping TL 3000
(1)
∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(1) Gate (2) Source (3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 45 ±12 ±3 ±12 0.8 12 1.0 150 −55 to +150 Unit V V A A A A W °C °C
Total power dissipation Channel temperature Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board
zThermal resistance
Parameter Channel to ambient
∗ When mounted on a ceramic board
Symbol Rth (ch-a) ∗
Limits 125
Unit °C / W
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0.3~0.6
1/4
2009.04 - Rev.A
RTR030N05
zElectrical characteristics (Ta=25°C)
Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance ...
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