High Power DPDT Switch
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High Power DPDT Switch with Logic Control
CXG1213XR
Description
This CXG1213XR can be used in wire...
Description
www.DataSheet4U.com
High Power DPDT Switch with Logic Control
CXG1213XR
Description
This CXG1213XR can be used in wireless communication systems, for example, W-CDMA handsets. The IC has on-chip logic for operation with 2 CMOS control inputs. The Sony JPHEMT process is used for low insertion loss and on-chip logic circuit. (Applications: Antenna switch for cellular handsets, dual-band W-CDMA)
Features
Low insertion loss 2 CMOS compatible control
Package
Small package size: 12-pin XQFN
Structure
GaAs JPHEMT MMIC
Absolute Maximum Ratings
(Ta = 25°C) Bias voltage Control voltage Operating temperature Storage temperature VDD Vctl Topr Tstg 7 5 –35 to +85 –65 to +150 V V
°C °C
GaAs MMICs are ESD sensitive devices.Special handing precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
-1-
E05X06A61
CXG1213XR
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Block Diagram and Recommended Circuit
RF2 GND CRF (27pF) 6 GND F3 7 5 F4 3 GND 4 CRF (27pF) RF3
RF1 CRF (1000pF) GND
8
F1
F5
F2
F6
2 CRF (1000pF)
RF4
9
1
GND
10
11
12
Cbypass (100pF) VDD CTLA CTLB
When using this IC, the following external components should be used: CR...
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