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IPS1011 Dataheets PDF



Part Number IPS1011
Manufacturers International Rectifier
Logo International Rectifier
Description INTELLIGENT POWER LOW SIDE SWITCH
Datasheet IPS1011 DatasheetIPS1011 Datasheet (PDF)

Data Sheet No. PD60235 www.DataSheet4U.com IPS1011(S)(R) INTELLIGENT POWER LOW SIDE SWITCH Features • • • • • • • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI Diagnostic on the input current Product Summary Rds(on) 13mΩ (max.) Vclamp 36V Ishutdown 85A (typ.) Packages Description The IPS1011(S)(R) is a three terminal Intelligent Power Switch (IPS) that features a low side MOSFET with overcurrent, over-.

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Data Sheet No. PD60235 www.DataSheet4U.com IPS1011(S)(R) INTELLIGENT POWER LOW SIDE SWITCH Features • • • • • • • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI Diagnostic on the input current Product Summary Rds(on) 13mΩ (max.) Vclamp 36V Ishutdown 85A (typ.) Packages Description The IPS1011(S)(R) is a three terminal Intelligent Power Switch (IPS) that features a low side MOSFET with overcurrent, over-temperature, ESD protection and drain to source active clamp. This device offers protections and the high reliability required in harsh environments. The switch provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165°C or when the drain current reaches 85A. The device restarts once the input is cycled. A serial resistance connected to the input provides the diagnostic. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. TO-220 IPS1011 D²Pak IPS1011S D-Pak IPS1011R Typical Connection +Bat Load D 1 Input R Input Signal V Diag IN S 3 2 Control www.irf.com 1 www.DataSheet4U.com IPS1011(S)(R) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Ground lead. (Tambient=25°C unless otherwise specified). Symbol Vds Vds cont. Vin Isd cont. Pd Parameter Maximum drain to source voltage Maximum continuous drain to source voltage Maximum input voltage Max diode continuous current (limited by thermal dissipation) Maximum power dissipation (internally limited by thermal protection) Rth=5°C/W IPS1011 Rth=40°C/W IPS1011S 1” sqr. footprint Rth=50°C/W IPS1011R 1” sqr. footprint Electrostatic discharge voltage (Human body) C=100pF, R=1500Ω Between drain and source Other combinations Electrostatic discharge voltage (Machine Model) C=200pF,R=0Ω Between drain and source Other combinations Max. storage & operating temperature junction temperature Lead soldering temperature (10 seconds) Min. -0.3 -0.3 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max. 36 28 6 5 25 3.1 2.5 4 3 0.5 0.3 150 300 Units V V V A W ESD kV Tj max. Tsoldering -40 ⎯ °C °C Thermal Characteristics Symbol Rth1 Rth2 Rth1 Rth2 Rth3 Rth1 Rth2 Rth3 Parameter Thermal resistance junction to ambient IPS1011 TO-220 free air Thermal resistance junction to case IPS1011 TO-220 Thermal resistance junction to ambient IPS1011S D²Pak std. footprint Thermal resistance junction to ambient IPS1011S D²Pak 1” sqr. footprint Thermal resistance junction to case IPS1011S D²Pak Thermal resistance junction to ambient IPS1011R D-Pak std. footprint Thermal resistance junction to ambient IPS1011R D-Pak 1” sqr. footprint Thermal resistance junction to case IPS1011R D-Pak Typ. 50 1.2 60 40 1.2 70 50 1.2 Max. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Units °C/W Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol VIH VIL Ids Parameter High level input voltage Low level input voltage Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V Rth=5°C/W IPS1011 Rth=40°C/W IPS1011S 1” sqr. Footprint Rth=50°C/W IPS1011R 1” sqr. Footprint Recommended resistor in series with IN pin to generate a diagnostic Max recommended load inductance (including line inductance) (1) Max frequency (switching losses = conduction losses) Max Input rising time Min. 4.5 0 ⎯ ⎯ ⎯ Max. 5.5 0.5 18 6.5 6 10 5 200 1 Units A Rin Max L Max F Max t rise 0.5 ⎯ ⎯ ⎯ kΩ µH Hz µs (1) Higher inductance is possible if maximum load current is limited - see figure 11 www.irf.com 2 www.DataSheet4U.com IPS1011(S)(R) Static Electrical Characteristics Tj=25°C, Vcc=14V (unless otherwise specified) Symbol Rds(on) Idss1 Idss2 V clamp1 V clamp2 Vin clamp Vth Parameter ON state resistance Tj=25°C ON state resistance Tj=150°C (2) Drain to source leakage current Drain to source leakage current Drain to source clamp voltage 1 Drain to source clamp voltage 2 IN to source pin clamp voltage Input threshold voltage Min. ⎯ ⎯ ⎯ ⎯ Typ. 10 19 0.1 0.2 39 40 6.5 1.7 Max. 13 25 10 20 ⎯ Units mΩ µA Test Conditions Vin=5V, Ids=30A Vcc=14V, Tj=25°C Vcc=28V, Tj=25°C Id=20mA Id=5A Iin=1mA Id=10mA 36 ⎯ 5.5 ⎯ 42 7.5 ⎯ V Switching Electrical Characteristics Vcc=14V, Resistive load=0.5Ω, Rinput=50Ω, Vin=5V, Tj=25°C Symbol Tdon Tr Tdoff Tf Eon + Eoff Parameter Turn-on delay time to 20% Rise time 20% to 80% Turn-off delay time to 80% Fall time 80% to 20% Turn on and off energy Min. 15 20 100 30 ⎯ Typ. 50 50 330 70 5 Max. 150 100 1000 150 ⎯ Units µs mJ Test Conditions See figure 2 Protection Characteristics Symbol Tsd Isd OV Vreset Treset Parameter Over temperature threshold Over current threshold Over voltage protection (not active when the device is ON ) IN protection reset threshold Time to reset protection Min. 150(2) 60 34 ⎯ Typ. 165 85 37 1.7 50 M.


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