Document
Data Sheet No. PD60235
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IPS1011(S)(R)
INTELLIGENT POWER LOW SIDE SWITCH
Features
• • • • • • • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI Diagnostic on the input current
Product Summary Rds(on) 13mΩ (max.) Vclamp 36V Ishutdown 85A (typ.) Packages
Description
The IPS1011(S)(R) is a three terminal Intelligent Power Switch (IPS) that features a low side MOSFET with overcurrent, over-temperature, ESD protection and drain to source active clamp. This device offers protections and the high reliability required in harsh environments. The switch provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165°C or when the drain current reaches 85A. The device restarts once the input is cycled. A serial resistance connected to the input provides the diagnostic. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
TO-220 IPS1011
D²Pak IPS1011S
D-Pak IPS1011R
Typical Connection
+Bat
Load D 1 Input R Input Signal V Diag IN S 3 2
Control
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IPS1011(S)(R)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Ground lead. (Tambient=25°C unless otherwise specified).
Symbol
Vds Vds cont. Vin Isd cont. Pd
Parameter
Maximum drain to source voltage Maximum continuous drain to source voltage Maximum input voltage Max diode continuous current (limited by thermal dissipation) Maximum power dissipation (internally limited by thermal protection) Rth=5°C/W IPS1011 Rth=40°C/W IPS1011S 1” sqr. footprint Rth=50°C/W IPS1011R 1” sqr. footprint Electrostatic discharge voltage (Human body) C=100pF, R=1500Ω Between drain and source Other combinations Electrostatic discharge voltage (Machine Model) C=200pF,R=0Ω Between drain and source Other combinations Max. storage & operating temperature junction temperature Lead soldering temperature (10 seconds)
Min.
-0.3 -0.3
⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯
Max.
36 28 6 5 25 3.1 2.5 4 3 0.5 0.3 150 300
Units
V V V A W
ESD
kV
Tj max. Tsoldering
-40
⎯
°C °C
Thermal Characteristics
Symbol
Rth1 Rth2 Rth1 Rth2 Rth3 Rth1 Rth2 Rth3
Parameter
Thermal resistance junction to ambient IPS1011 TO-220 free air Thermal resistance junction to case IPS1011 TO-220 Thermal resistance junction to ambient IPS1011S D²Pak std. footprint Thermal resistance junction to ambient IPS1011S D²Pak 1” sqr. footprint Thermal resistance junction to case IPS1011S D²Pak Thermal resistance junction to ambient IPS1011R D-Pak std. footprint Thermal resistance junction to ambient IPS1011R D-Pak 1” sqr. footprint Thermal resistance junction to case IPS1011R D-Pak
Typ.
50 1.2 60 40 1.2 70 50 1.2
Max.
⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯
Units
°C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol
VIH VIL Ids
Parameter
High level input voltage Low level input voltage Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V Rth=5°C/W IPS1011 Rth=40°C/W IPS1011S 1” sqr. Footprint Rth=50°C/W IPS1011R 1” sqr. Footprint Recommended resistor in series with IN pin to generate a diagnostic Max recommended load inductance (including line inductance) (1) Max frequency (switching losses = conduction losses) Max Input rising time
Min.
4.5 0
⎯ ⎯ ⎯
Max.
5.5 0.5 18 6.5 6 10 5 200 1
Units
A
Rin Max L Max F Max t rise
0.5
⎯ ⎯ ⎯
kΩ µH Hz µs
(1) Higher inductance is possible if maximum load current is limited - see figure 11
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IPS1011(S)(R)
Static Electrical Characteristics
Tj=25°C, Vcc=14V (unless otherwise specified)
Symbol
Rds(on) Idss1 Idss2 V clamp1 V clamp2 Vin clamp Vth
Parameter
ON state resistance Tj=25°C ON state resistance Tj=150°C (2) Drain to source leakage current Drain to source leakage current Drain to source clamp voltage 1 Drain to source clamp voltage 2 IN to source pin clamp voltage Input threshold voltage
Min.
⎯ ⎯ ⎯ ⎯
Typ.
10 19 0.1 0.2 39 40 6.5 1.7
Max.
13 25 10 20
⎯
Units
mΩ µA
Test Conditions
Vin=5V, Ids=30A Vcc=14V, Tj=25°C Vcc=28V, Tj=25°C Id=20mA Id=5A Iin=1mA Id=10mA
36
⎯
5.5
⎯
42 7.5
⎯
V
Switching Electrical Characteristics
Vcc=14V, Resistive load=0.5Ω, Rinput=50Ω, Vin=5V, Tj=25°C
Symbol
Tdon Tr Tdoff Tf Eon + Eoff
Parameter
Turn-on delay time to 20% Rise time 20% to 80% Turn-off delay time to 80% Fall time 80% to 20% Turn on and off energy
Min.
15 20 100 30
⎯
Typ.
50 50 330 70 5
Max.
150 100 1000 150
⎯
Units
µs mJ
Test Conditions
See figure 2
Protection Characteristics
Symbol
Tsd Isd OV Vreset Treset
Parameter
Over temperature threshold Over current threshold Over voltage protection (not active when the device is ON ) IN protection reset threshold Time to reset protection
Min.
150(2) 60 34
⎯
Typ.
165 85 37 1.7 50
M.