SMD Type
TrenchPLUS standard level FET KUK7107-55AIE
TO-263
Features
Integrated temperature sensor ESD protection
+ 0 .2...
SMD Type
TrenchPLUS standard level FET KUK7107-55AIE
TO-263
Features
Integrated temperature sensor ESD protection
+ 0 .2 8 .7 -0 .2 + 0 .1 1 .2 7 -0 .1
Transistors IC
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Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Q101 compliant Standard level compatible
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+ 0 .2 5 .2 8 -0 .2
2.54
+0.2 -0.2 +0.1 5.08-0.1
+ 0 .2 2 .5 4 -0 .2
+ 0 .2 1 5 .2 5 -0 .2
2.54
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain-source voltage Drain-gate voltage IDG = 250 ìA Gate-source voltage Drain current (DC) Tmb = 25 ,VGS = 10 V Drain current (DC) Tmb = 100 ,VGS = 10 V peak drain current *1 Total power dissipation Tmb = 25 gate-source clamping current (continuous) gate-source clamping current *3 Storage & operating temperature reverse drain current (DC) Tmb = 25 pulsed reverse drain current *1 non-repetitive avalanche energy *2 electrostatic discharge voltage; all pins *4 Thermal resistance junction to mounting base Thermal resistance junction to ambient * 1 Tmb = 25 ; pulsed; tp 10 ìs; 55 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25 Tstg, Tj IDR IDRM EDS(AL)S Vesd Rth j-mb Rth j-a Symbol VDS VDGR VGS ID ID IDM Ptot IGS(CL) Rating 55 55 20 140 75 560 272 10 50 -55 to 175 140 75 560 460 6 0.55 50 A A A J KV K/W K/W Unit V V V A A A W mA mA
*2 unclamped inductive load; ID = 68 A;VDS *3 tp = 5 ms; = 0.01
*4 Human Body Model; C = 100 pF; R = 1.5 k
5 .6 0
1Gate gate 1 2Drain drain 2 3Source source 3
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1
SMD Type
KUK7107...