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FDS6299S Dataheets PDF



Part Number FDS6299S
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 30V N-Channel PowerTrench SyncFET
Datasheet FDS6299S DatasheetFDS6299S Datasheet (PDF)

www.DataSheet4U.com FDS6299S 30V N-Channel PowerTrench® SyncFET™ November 2007 tm FDS6299S 30V N-Channel PowerTrench® SyncFET™ General Description The FDS6299S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6299S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. Applications • Sy.

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www.DataSheet4U.com FDS6299S 30V N-Channel PowerTrench® SyncFET™ November 2007 tm FDS6299S 30V N-Channel PowerTrench® SyncFET™ General Description The FDS6299S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6299S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. Applications • Synchronous Rectifier for DC/DC Converters • Notebook Vcore low side switch • Point of load low side switch Features • 21 A, 30 V. RDS(ON) = 3.9 mΩ @ VGS = 10 V RDS(ON) = 5.1 mΩ @ VGS = 4.5 V • • • • • Includes SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability 100% RG (Gate Resistance) tested Termination is Lead-free and RoHS Compliant D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units V V A W 21 105 2.5 1.2 1 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W Package Marking and Ordering Information Device Marking FDS6299S Device FDS6299S Reel Size 13’’ Tape width 12mm Quantity 2500 units ©2007 Fairchild Semiconductor Corporation FDS6299S Rev C1 (W) www.DataSheet4U.com FDS6299S 30V N-Channel PowerTrench® SyncFET™ Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage TA = 25°C unless otherwise noted Parameter Test Conditions VGS = 0 V, ID = 1 mA Min Typ Max Units 30 22 500 ±100 V mV/°C µA nA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = ±20 V, VGS = 0 V VDS = 0 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance VDS = VGS, ID = 1 mA 1 1.7 –5 3.3 4.1 4.5 94 3.9 5.1 5.6 3 V mV/°C mΩ ID = 10 mA, Referenced to 25°C VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 19 A VGS=10 V, ID =21 A, TJ=125°C VDS = 10 V, ID = 21 A gFS S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 3880 1030 310 pF pF pF 3.1 Ω f = 1.0 MHz 0.4 1.8 Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 12 12 60 35 22 22 96 56 81 43 ns ns ns ns nC nC nC nC Total Gate Charge at VGS=10V Total Gate Charge at VGS=5V Gate–Source Charge Gate–Drain Charge VDS = 15 V, ID = 21 A 58 31 11 8 Drain–Source Diode Characteristics and Maximum Ratings VSD trr IRM Qrr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A (Note 2) 420 32 2.1 34 700 mV ns A nC IF = 21 A, dIF/dt = 300 A/µs (Note 3) Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when mounted on a 1 in2 pad of 2 oz copper b) 105°/W when mounted on a .04 in2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. 3. See “SyncFET Schottky body diode characteristics” below. FDS6299S Rev C1 (W) www.DataSheet4U.com FDS6299S 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics 105 VGS = 10V 90 ID, DRAIN CURRENT (A) 4.5V 75 60 45 30 15 2.5V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 3.0V 4.0V 3.5V 2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3.0V 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 15 30 45 60 75 ID, DRAIN CURRENT (A) 90 105 3.5V 4.0V 4.5V 5.0V 6.0V 10V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.012 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) ID = 21A VGS =10V ID = 10.5A 0.01 1.4 1.2 0.008 TA = 125oC 0.006 1 0.8 0.004 TA = 25 C 0.002 o 0.6 -50 -25 0 25 50 75 o TJ, JUNCTION TEMPERATURE ( C) 100 125 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 105 VDS = 5V IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with .


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