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FDS6299S 30V N-Channel PowerTrench® SyncFET™
November 2007
tm
FDS6299S
30V N-Channel PowerTrench® SyncFET™
General Description
The FDS6299S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6299S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. Applications • Synchronous Rectifier for DC/DC Converters • Notebook Vcore low side switch • Point of load low side switch
Features
• 21 A, 30 V. RDS(ON) = 3.9 mΩ @ VGS = 10 V RDS(ON) = 5.1 mΩ @ VGS = 4.5 V • • • • • Includes SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability 100% RG (Gate Resistance) tested Termination is Lead-free and RoHS Compliant
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W
21 105 2.5 1.2 1 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W
Package Marking and Ordering Information
Device Marking FDS6299S Device FDS6299S Reel Size 13’’ Tape width 12mm Quantity 2500 units
©2007 Fairchild Semiconductor Corporation
FDS6299S Rev C1 (W)
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FDS6299S 30V N-Channel PowerTrench® SyncFET™
Electrical Characteristics
Symbol Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage
TA = 25°C unless otherwise noted
Parameter
Test Conditions
VGS = 0 V, ID = 1 mA
Min Typ Max Units
30 22 500 ±100 V mV/°C µA nA
ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = ±20 V, VGS = 0 V VDS = 0 V
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance VDS = VGS, ID = 1 mA 1 1.7 –5 3.3 4.1 4.5 94 3.9 5.1 5.6 3 V mV/°C mΩ ID = 10 mA, Referenced to 25°C VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 19 A VGS=10 V, ID =21 A, TJ=125°C VDS = 10 V, ID = 21 A
gFS
S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, f = 1.0 MHz VGS = 15 mV,
V GS = 0 V,
3880 1030 310
pF pF pF 3.1 Ω
f = 1.0 MHz
0.4
1.8
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time
VDD = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6 Ω
12 12 60 35
22 22 96 56 81 43
ns ns ns ns nC nC nC nC
Total Gate Charge at VGS=10V Total Gate Charge at VGS=5V Gate–Source Charge Gate–Drain Charge
VDS = 15 V,
ID = 21 A
58 31 11 8
Drain–Source Diode Characteristics and Maximum Ratings
VSD trr IRM Qrr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A
(Note 2)
420 32 2.1 34
700
mV ns A nC
IF = 21 A, dIF/dt = 300 A/µs
(Note 3)
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when mounted on a 1 in2 pad of 2 oz copper
b) 105°/W when mounted on a .04 in2 pad of 2 oz copper
c) 125°/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. 3. See “SyncFET Schottky body diode characteristics” below.
FDS6299S Rev C1 (W)
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FDS6299S 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics
105 VGS = 10V 90 ID, DRAIN CURRENT (A) 4.5V 75 60 45 30 15 2.5V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 3.0V 4.0V 3.5V
2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 3.0V
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 15 30 45 60 75 ID, DRAIN CURRENT (A) 90 105
3.5V 4.0V 4.5V 5.0V 6.0V 10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.012
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)
ID = 21A VGS =10V
ID = 10.5A 0.01
1.4
1.2
0.008 TA = 125oC 0.006
1
0.8
0.004 TA = 25 C 0.002
o
0.6 -50
-25
0 25 50 75 o TJ, JUNCTION TEMPERATURE ( C)
100
125
2
4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with Temperature.
105
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with .