IS45S83200C

IS45S83200C IS45S16160C 256 Mb Single Data Rate Synchronous DRAM www.DataSheet4U.com APRIL 2009 IS45S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS45S16160C is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to the rising edge of CLK. IS45S83200C and IS45S16160C achieve very high speed data rates up to 166MHz, and are suitable for main memories or graphic memories in computer systems. General Description - Single 3.3V ±0.3V power supply - Max. Clock frequency : - 6:166MHz<3-3-3>/-7:143MHz<3-3-3>/-75:133MHz<3-3-3> - Fully synchronous operation referenced to clock rising edge - 4-bank operation controlled by BA0,BA1(Bank Address) - /CAS latency- 2/3 (programmable) - Burst length- 1/2/4/8/FP (programmable) - Burst type- Sequential and interleave burst (programmable) - Byte Control- LDQM and UDQM (IS45S16160C) - Random column access - Auto precharge / All bank precharge controlled by A10 - Auto and self refresh - 8192 refresh cycles /64ms - LVTTL Interface - Package 400-mil, 54-pin Thin Small Outline (TSOP II) with 0.8mm lead pitch Pb-free package is available Features Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advise...