KUK7606-55B

SMD Type TrenchMOSTM standard level FET KUK7606-55B TO-263 Features Very low on-state resistance Q101 compliant 175 rated + 0 .2 8 .7 -0 .2 + 0 .1 1 .2 7 -0 .1 Transistors IC www.DataSheet4U.com Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Standard level compatible. +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Drain-gate voltage RGS = 20 KÙ Gate-source voltage Drain current (DC) Tmb = 25 ,VGS = 10 V Drain current (DC) Tmb = 100 ,VGS = 10 V Drain current (pulse peak value) *1 Total power dissipation Tmb = 25 Storage & operating temperature reverse drain current (DC) Tmb = 25 pulsed reverse drain current *1 non-repetitive avalanche energy *2 Thermal resistance junction to mounting base Thermal resistance junction to ambient * 1 Tmb = 25 ; pulsed; tp 10 ìs; 55 V; VGS = 10 V; RGS = 50Ù;starting Tmb = 25 Symbol VDS VDGR VGS ID ID IDM Ptot Tstg, Tj IDR IDRM EDS(AL)S Rth j-mb Rth j-a 145 75 582 254 -55 to 175 145 75 582 680 0.59 50 A A A J K/W K/W Rating 55 55 Unit V V V A A A W *2 unclamped inductive load; ID = 75 A;VDS 5 .6 0 1Gate gate 1 2Drain drain 2 3Source source 3 www.kexin.com.cn 1 SMD Type KUK7606-55B Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage Symbol V(BR)DSS Testconditons ID = 0.25 mA; VGS = 0 V;Tj = 25 ID = 0.25 mA; VGS = 0 V;Tj = -55 ID = 1 mA; VDS = VGS;Tj = 25 gate...