SMD Type
TrenchMOSTM standard level FET KUK7606-75B
TO-263
+ 0 .1 1 .2 7 -0 .1
Transistors IC
www.DataSheet4U.com
Uni...
SMD Type
TrenchMOSTM standard level FET KUK7606-75B
TO-263
+ 0 .1 1 .2 7 -0 .1
Transistors IC
www.DataSheet4U.com
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Very low on-state resistance Q101 compliant
+ 0 .2 8 .7 -0 .2
175
rated
Standard level compatible.
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+ 0 .2 5 .2 8 -0 .2
2.54
+0.2 -0.2 +0.1 5.08-0.1
+ 0 .2 2 .5 4 -0 .2
+ 0 .2 1 5 .2 5 -0 .2
2.54
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain-source voltage Drain-gate voltage RGS = 20 KÙ Gate-source voltage Drain current (DC) Tmb = 25 ,VGS = 10 V Drain current (DC) Tmb = 100 ,VGS = 10 V Drain current (pulse peak value) *1 Total power dissipation Tmb = 25 Storage & operating temperature reverse drain current (DC) Tmb = 25 pulsed reverse drain current *1 non-repetitive avalanche energy *2 Thermal resistance junction to mounting base Thermal resistance junction to ambient * 1 Tmb = 25 ; pulsed; tp 10 ìs; 75 V; VGS = 10 V; RGS = 50Ù;starting Tmb = 25 Symbol VDS VDGR VGS ID ID IDM Ptot Tstg, Tj IDR IDRM EDS(AL)S Rth j-mb Rth j-a 159 75 638 300 -55 to 175 159 75 638 852 0.5 50 A A A J K/W K/W Rating 75 75 Unit V V V A A A W
*2 unclamped inductive load; ID = 75 A;VDS
5 .6 0
1Gate gate 1 2Drain drain 2 3Source source 3
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1
SMD Type
KUK7606-75B
Electrical Characteristics Ta = 25
Parameter drain-source breakdown voltage Symbol V(BR)DSS Testconditons ID = 0.25 mA; VGS = 0 V;Tj = 25 ID = 0.25 mA; VGS = 0 V;Tj = -55 ID = 1 mA; VDS = VGS;Tj = 25 g...