IS61LF6436A

IS61LF6436A IS61LF6432A ® Long-term Support World Class Quality 64Kx32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM MAY 2017 FEATURES Internal self-timed write cycle Individual Byte Write Control and Global Write Clock controlled, registered address, data and control Interleaved or linear burst sequence control us- ing MODE input Three chip enables for simple depth expansion and address pipelining Common data inputs and data outputs Power-down control by ZZ input JEDEC 100-Pin TQFP package Power Supply: +3.3V Vdd +3.3V or 2.5V Vddq Control pins mode upon power-up: – MODE in interleave burst mode – ZZ in normal operation mode Industrial Temperature Available: (-40oC to +85oC) Lead-free available DESCRIPTION The ISSI IS61LF6432A and IS61LF6436A are high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, memory. IS61LF6432A is organized as 65,536 words by 32 bits. IS61LF6436A is organized as 65,536 words by 36 bits. They are fabricated with ISSI's advanced CMOS technology. The device inte- grates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input. Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be from one to four bytes wide as controlled by the write control inputs. Separate byte...