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POWER MOSFET. STE24NA100 Datasheet

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POWER MOSFET. STE24NA100 Datasheet






STE24NA100 MOSFET. Datasheet pdf. Equivalent




STE24NA100 MOSFET. Datasheet pdf. Equivalent





Part

STE24NA100

Description

ISOTOP FAST POWER MOSFET



Feature


www.DataSheet4U.com ® STE24NA100 N - CHANNEL 1000V - 0.35Ω - 24A - ISOTOP FAST POWER MOSFET TYPE STE24NA100 s s s s s s V DSS 1000 V R DS(on) < 0.385 Ω ID 24 A TYPICAL RDS(on) = 0.35 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CA PACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD APPLICATIONS s HIGH CU RRENT, HIGH SPEED SWITCHIN.
Manufacture

STMicroelectronics

Datasheet
Download STE24NA100 Datasheet


STMicroelectronics STE24NA100

STE24NA100; G s SWITCH MODE POWER SUPPLY (SMPS) s DC -AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE ISOTOP INTERNAL SCHEMATIC DIAG RAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM ( • ) P tot T s tg Tj V ISO Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (contin.


STMicroelectronics STE24NA100

uous) at Tc = 25 C Drain Current (contin uous) at Tc = 100 C Drain Current (puls ed) T otal Dissipation at Tc = 25 C Der ating Factor Storage T emperature Max. Operating Junction Temperature Insulati on Withstand Voltage (AC-RMS) o o o Va lue 1000 1000 ± 30 24 15 96 450 3.6 -5 5 to 150 150 2500 Un it V V V A A A W W /o C o o C C V 1/8 (•) Pulse wid th limited by safe op.


STMicroelectronics STE24NA100

erating area October 1998 www.DataShee t4U.com STE24NA100 THERMAL DATA R thj -case R thc-h Thermal Resistance Juncti on-case Thermal Resistance Case-heatsin k With Conductive Grease Applied Max Ma x 0.27 0.05 o o C/W C/W AVALANCHE CHA RACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-R epetitive (pulse width limited by Tj ma x) Single Pulse Av.

Part

STE24NA100

Description

ISOTOP FAST POWER MOSFET



Feature


www.DataSheet4U.com ® STE24NA100 N - CHANNEL 1000V - 0.35Ω - 24A - ISOTOP FAST POWER MOSFET TYPE STE24NA100 s s s s s s V DSS 1000 V R DS(on) < 0.385 Ω ID 24 A TYPICAL RDS(on) = 0.35 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CA PACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD APPLICATIONS s HIGH CU RRENT, HIGH SPEED SWITCHIN.
Manufacture

STMicroelectronics

Datasheet
Download STE24NA100 Datasheet




 STE24NA100
www.DataSheet4U.com
® STE24NA100
N - CHANNEL 1000V - 0.35- 24A - ISOTOP
FAST POWER MOSFET
TYPE
V DSS
RDS(on)
ID
STE24NA100 1000 V < 0.385 24 A
s TYPICAL RDS(on) = 0.35
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
VGS
ID
ID
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
Ts tg Storage T emperature
Tj Max. Operating Junction Temperature
VISO I nsulation Withstand Voltage (AC-RMS)
() Pulse width limited by safe operating area
October 1998
Value
1000
1000
± 30
24
15
96
450
3 .6
-55 to 150
150
2500
Un it
V
V
V
A
A
A
W
W /o C
oC
oC
V
1/8




 STE24NA100
STE24NA100
www.DataSheet4U.com
THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.27
0.05
oC/W
oC/W
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
12
2000
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 500 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
1000
Typ. Max.
50
250
± 400
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS
Static Drain-source On VGS = 10 V
Resistance
ID = 1 mA
ID = 12 A
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
2.25
Typ.
3
0.35
Max.
3.75
0.385
Unit
V
24 A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x
ID = 12 A
Min.
15
Typ.
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
14000 19000
1200 1600
300 390
pF
pF
pF
2/8




 STE24NA100
www.DataSheet4U.com
STE24NA100
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Qg Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 500 V
ID = 12 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 800 V ID = 24 A VGS = 10 V
Min.
Typ.
40
55
470
43
226
Max.
56
77
660
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 800 V
ID = 24 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
110
25
150
Max.
154
35
210
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
ISD
ISDM ()
VSD ()
trr
Qrr
I R RM
P ar am et e r
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 24 A VGS = 0
ISD = 24 A
VDD = 100 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, figure 5)
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
24
96
Unit
A
A
1.6 V
1.4 µs
41 µC
60 A
Safe Operating Area
Thermal Impedance
3/8






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