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MOS TRANSISTOR. STE250N06 Datasheet

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MOS TRANSISTOR. STE250N06 Datasheet






STE250N06 TRANSISTOR. Datasheet pdf. Equivalent




STE250N06 TRANSISTOR. Datasheet pdf. Equivalent





Part

STE250N06

Description

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

Manufacture

STMicroelectronics

Datasheet
Download STE250N06 Datasheet


STMicroelectronics STE250N06

STE250N06; www.DataSheet4U.com STE250N06 N - CHANN EL ENHANCEMENT MODE POWER MOS TRANSISTO R IN ISOTOP PACKAGE TYPE STE250N06 s s VDSS 60 V R DS(on) < 0.004 Ω ID 25 0 A 4 3 s s s s s s s HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLO GY (SEE STH80N06 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR T HE TWO SOURCE TERMIN.


STMicroelectronics STE250N06

ALS EXTREMELY LOW Rth JUNCTION TO CASE V ERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPI CALLY < 5 nH) ISOLATED PACKAGE UL RECOG NIZED (FILE No E81743) 1 2 ISOTOP IN TERNAL SCHEMATIC DIAGRAM INDUSTRIAL AP PLICATIONS: SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS s ABSOLUTE MA XIMUM RATINGS Symb.


STMicroelectronics STE250N06

ol V DS V DGR V GS ID ID I DM ( •) P t ot T stg Tj V ISO Parameter Drain-Sourc e Voltage (V GS = 0) Drain-Gate Voltage (R GS = 20 k Ω ) Gate-Source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Diss ipation at T c = 25 o C Derating Factor Storage Temperature Max. Operating Jun ction Temperature Insu.



Part

STE250N06

Description

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

Manufacture

STMicroelectronics

Datasheet
Download STE250N06 Datasheet




 STE250N06
www.DataSheet4U.com
STE250N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR IN ISOTOP PACKAGE
TYPE
STE250N06
VDSS
60 V
RDS(on)
< 0.004
ID
250 A
s HIGH CURRENT POWER MODULE
s AVALANCHE RUGGED TECHNOLOGY
(SEE STH80N06 FOR RATING)
s VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
s EASY TO MOUNT
s SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
s EXTREMELY LOW Rth JUNCTION TO CASE
s VERY LOW DRAIN TO CASE CAPACITANCE
s VERY LOW INTERNAL PARASITIC
INDUCTANCE (TYPICALLY < 5 nH)
s ISOLATED PACKAGE UL RECOGNIZED
(FILE No E81743)
INDUSTRIAL APPLICATIONS:
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
1
2
4
3
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-Source Voltage (VGS = 0)
VDGR Drain-Gate Voltage (RGS = 20 k)
VGS Gate-Source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
VISO Insulation Withstand Voltage (AC-RMS)
() Pulse width limited by safe operating area
May 1995
Value
60
60
± 20
250
155
750
450
3.6
-55 to 150
150
2500
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
V
1/8





 STE250N06
STE250N06
www.DataSheet4U.com
THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.27
0.05
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 1 mA VGS = 0 V
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
60
Typ.
Max.
Unit
V
400
2
± 400
µA
mA
nA
ON ()
Symbol
VGS(th)
RDS(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 1 mA
Static Drain-source On VGS = 10V ID = 125 A
Resistance
Min.
2
Typ.
Max.
4
0.004
Unit
V
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V ID = 125 A
Min.
100
Typ.
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0 V
25
10000
3000
nF
pF
pF
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Qg
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Test Conditions
VDD = 25 V ID = 125 A
RG = 4.7 VGS = 10 V
(see test circuit, figure 1)
VDD = 40 V ID = 250 A
RG = 4.7 VGS = 10 V
(see test circuit, figure 3)
VDD = 40 V
VGS = 10 V
ID = 250 A
Min.
Typ.
95
300
Max.
Unit
ns
ns
440 A/µs
475 nC
2/8





 STE250N06
www.DataSheet4U.com
STE250N06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 40 V ID = 250 A
RG = 4.7 VGS = 10 V
(see test circuit, figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 250 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 250 A
di/dt = 100 A/µs
VDD = 25 V Tj = 150 oC
(see test circuit, figure 3)
IRRM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
140
745
1000
Max.
Unit
ns
ns
ns
Min.
Typ.
Max.
250
750
Unit
A
A
210
1.31
12.5
1.6
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8



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