DatasheetsPDF.com

Power MOSFET. STE250NS10 Datasheet

DatasheetsPDF.com

Power MOSFET. STE250NS10 Datasheet






STE250NS10 MOSFET. Datasheet pdf. Equivalent




STE250NS10 MOSFET. Datasheet pdf. Equivalent





Part

STE250NS10

Description

ISOTOP STripFET Power MOSFET

Manufacture

STMicroelectronics

Datasheet
Download STE250NS10 Datasheet


STMicroelectronics STE250NS10

STE250NS10; STE250NS10 N-channel 100 V, 0.0045 Ω, 220 A, ISOTOP STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STE 250NS10 100 V <0.0055 Ω 220 A t(s) Standard threshold drive ■ 100% av alanche tested ducDescription ProThis Power MOSFET is the latest development of STMicroelectronics unique "single fe ature size" testrip-based process. The resulting transistor leshows.


STMicroelectronics STE250NS10

extremely high packing density for low onoresistance, rugged avalanche charact eristics and bsless critical alignment steps therefore a remarkable manufactur ing reproducibility. ) - OApplications Obsolete Product(s■ Switching applic ation ISOTOP Figure 1. Internal schema tic diagram Table 1. Device summary Or der code STE250NS10 Marking E250NS10 Package ISOTOP Pack.


STMicroelectronics STE250NS10

aging Tube March 2010 Doc ID 8220 Rev 3 1/14 www.st.com 14 Contents Conten ts STE250NS10 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2. 1 Electrical characteristics (curves) . . . . . . . . . ..



Part

STE250NS10

Description

ISOTOP STripFET Power MOSFET

Manufacture

STMicroelectronics

Datasheet
Download STE250NS10 Datasheet




 STE250NS10
STE250NS10
N-channel 100 V, 0.0045 , 220 A, ISOTOP
STripFET™ Power MOSFET
Features
Type
VDSS
RDS(on)
ID
STE250NS10
100 V <0.0055 220 A
t(s)Standard threshold drive
100% avalanche tested
ducDescription
ProThis Power MOSFET is the latest development of
STMicroelectronics unique "single feature size"
testrip-based process. The resulting transistor
leshows extremely high packing density for low on-
oresistance, rugged avalanche characteristics and
bsless critical alignment steps therefore a
remarkable manufacturing reproducibility.
) - OApplications
Obsolete Product(sSwitching application
ISOTOP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STE250NS10
Marking
E250NS10
Package
ISOTOP
Packaging
Tube
March 2010
Doc ID 8220 Rev 3
1/14
www.st.com
14





 STE250NS10
Contents
Contents
STE250NS10
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
)4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
ct(s5 Mounting information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
du5.1 Mounting on heatsink . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Obsolete Product(s) - Obsolete Pro6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 Doc ID 8220 Rev 3





 STE250NS10
STE250NS10
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS Drain-source voltage (vgs = 0)
100 V
VGS Gate- source voltage
±20 V
ID Drain current (continuos) at TC = 25°C
220 A
ID Drain current (continuos) at TC = 100°C
156 A
IDM (1)
t(s)PTOT
ucdv/dt(2)
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
rodVISO
PTJ
teTstg
Insulation winthstand voltage (DC)
Operating junction temperature
Storage temperature
le1. Pulse width limited by safe operating area
so2. ISD 220 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
- ObTable 3.
t(s)Symbol
Thermal data
Parameter
cRthj-case Thermal resistance junction-case Max
duRthj-a Thermal resistance junction-ambient Max
te ProTable 4. Avalanche characteristics
leSymbol
Parameter
so Avalanche current, repetitive or not-repetitive
Ob IAS (pulse width limited by Tj max)
880
500
4
3.5
2500
150
-55 to 150
A
W
W/°C
V/ns
V
°C
Value
0.25
50
Value
220
Unit
°CW
°CW
Unit
A
Single pulse avalanche energy
EAS (starting Tj=25 °C, Id=Iar, Vdd=64 V)
800 mJ
Doc ID 8220 Rev 3
3/14



Recommended third-party STE250NS10 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)