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POWER MOSFET. STE26NA90 Datasheet

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POWER MOSFET. STE26NA90 Datasheet






STE26NA90 MOSFET. Datasheet pdf. Equivalent




STE26NA90 MOSFET. Datasheet pdf. Equivalent





Part

STE26NA90

Description

ISOTOP FAST POWER MOSFET

Manufacture

STMicroelectronics

Datasheet
Download STE26NA90 Datasheet


STMicroelectronics STE26NA90

STE26NA90; www.DataSheet4U.com ® STE26NA90 N - C HANNEL 900V - 0.25Ω - 26A - ISOTOP FA ST POWER MOSFET TYPE STE26NA90 s s s s s s V DSS 900 V R DS(on) < 0.3 Ω ID 26 A TYPICAL RDS(on) = 0.25 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITA NCE GATE CHARGE MINIMIZED REDUCED VOLTA GE SPREAD APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SW.


STMicroelectronics STE26NA90

ITCH MODE POWER SUPPLY (SMPS) s DC-AC CO NVERTER FOR WELDING EQUIPMENT AND UNINT ERRUPTABLE POWER SUPPLY AND MOTOR DRIVE ISOTOP INTERNAL SCHEMATIC DIAGRAM A BSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM ( • ) P tot T s t g Tj V ISO Parameter Drain-source Volta ge (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) .


STMicroelectronics STE26NA90

at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operat ing Junction Temperature Insulation Wit hstand Voltage (AC-RMS) o o o Value 90 0 900 ± 30 26 16.2 104 450 3.6 -55 to 150 150 2500 Un it V V V A A A W W /o C o o C C V 1/8 (•) Pulse width li mited by safe operati.



Part

STE26NA90

Description

ISOTOP FAST POWER MOSFET

Manufacture

STMicroelectronics

Datasheet
Download STE26NA90 Datasheet




 STE26NA90
www.DataSheet4U.com
® STE26NA90
N - CHANNEL 900V - 0.25- 26A - ISOTOP
FAST POWER MOSFET
TYPE
V DSS
RDS(on)
ID
STE26NA90
900 V
< 0.3
26 A
s TYPICAL RDS(on) = 0.25
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
VGS
ID
ID
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
Ts tg Storage T emperature
Tj Max. Operating Junction Temperature
VISO I nsulation Withstand Voltage (AC-RMS)
() Pulse width limited by safe operating area
October 1998
Value
900
900
± 30
26
16 .2
104
450
3 .6
-55 to 150
150
2500
Un it
V
V
V
A
A
A
W
W /o C
oC
oC
V
1/8





 STE26NA90
STE26NA90
www.DataSheet4U.com
THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.27
0.05
oC/W
oC/W
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
13
3000
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 500 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
900
Typ. Max.
250
1000
± 200
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS
Static Drain-source On VGS = 10 V
Resistance
ID = 1 mA
ID = 13 A
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
2.25
Typ.
3
0.25
Max.
3.75
0.3
Unit
V
26 A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x
ID = 13 A
Min.
15
Typ.
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
13600 17700
1130 1470
270 350
pF
pF
pF
2/8





 STE26NA90
www.DataSheet4U.com
STE26NA90
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Qg Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 450 V
ID = 12 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 720 V ID = 26 A VGS = 10 V
Min.
Typ.
40
52
470
43
226
Max.
56
73
660
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 720 V
ID = 26 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
108
25
145
Max.
152
35
203
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
ISD
ISDM ()
VSD ()
trr
Qrr
I R RM
P ar am et e r
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 26 A VGS = 0
ISD = 26 A
VDD = 100 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, figure 5)
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
26
104
Unit
A
A
1.6 V
1.3 µs
38 µC
58 A
Safe Operating Area
Thermal Impedance
3/8



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