DatasheetsPDF.com

Wave Amplifer. AMMP-5024 Datasheet

DatasheetsPDF.com

Wave Amplifer. AMMP-5024 Datasheet






AMMP-5024 Amplifer. Datasheet pdf. Equivalent




AMMP-5024 Amplifer. Datasheet pdf. Equivalent





Part

AMMP-5024

Description

30kHz - 40 GHz Traveling Wave Amplifer



Feature


AMMP-5024 30kHz – 40 GHz Traveling Wa ve Amplifier www.DataSheet4U.com Data Sheet Description Avago Technologies AMMP-5024 is a broadband PHEMT GaAs MMIC TWA designed for medium output pow er and high gain over the full 30 KHz t o 40 GHz frequency range. The design em ploys a 9-stage, cascade-connected FET structure to ensure flat gain and power as well as uniform gr.
Manufacture

AVAGO TECHNOLOGIES

Datasheet
Download AMMP-5024 Datasheet


AVAGO TECHNOLOGIES AMMP-5024

AMMP-5024; oup delay. E-beam lithography is used to produce uniform gate lengths of 0.15um and MBE technology assures precise sem iconductor layer control. Features • • • • • Surface Mount Pac kage 5.0 x 5.0 x 2.0 mm Wide Frequency Range 30kHz – 40GHz High Gain: 14.8 d B Typical @ 22GHz Output P1dB: 22 dBm T ypical @ 22GHz 50 Ohm Input and Output Match Applications [1] • Bro.


AVAGO TECHNOLOGIES AMMP-5024

adband Test and Measurement Applications Notes: 1. Use in hermetic assemblies o nly. Pin Connections (Top View) Pin 1 2 3 4 5 6 7 8 Function Vaux Not Used Not Used RFout / Vdd Vg1 Not U sed Vg2 RFin Attention: Observe precau tions for handling electrostatic sensit ive devices. ESD Machine Model (Class A ): 40V ESD Human Body Model (Class 0): 150V Refer to Avag.


AVAGO TECHNOLOGIES AMMP-5024

o Application Note A004R: Electrostatic Discharge Damage and Control. RoHS-Exe mption Please refer to Hazardous subst ances table on page 11. Table 1. Absol ute Maximum Ratings[1] Symbol Param eters and Test Conditions Vdd Idd Vg 1 Ig1 Vg2 Ig2 Pin Tch Tstg Tmax Positive Drain Voltage Total Drain Cu rrent First Gate Voltage First Gate C urrent Second Gat.

Part

AMMP-5024

Description

30kHz - 40 GHz Traveling Wave Amplifer



Feature


AMMP-5024 30kHz – 40 GHz Traveling Wa ve Amplifier www.DataSheet4U.com Data Sheet Description Avago Technologies AMMP-5024 is a broadband PHEMT GaAs MMIC TWA designed for medium output pow er and high gain over the full 30 KHz t o 40 GHz frequency range. The design em ploys a 9-stage, cascade-connected FET structure to ensure flat gain and power as well as uniform gr.
Manufacture

AVAGO TECHNOLOGIES

Datasheet
Download AMMP-5024 Datasheet




 AMMP-5024
AMMP-5024
30kHz – 40 GHz Traveling Wave Amplifier
Data Sheet
www.DataSheet4U.com
Description
Avago Technologies’ AMMP-5024 is a broadband PHEMT
GaAs MMIC TWA designed for medium output power and
high gain over the full 30 KHz to 40 GHz frequency range.
The design employs a 9-stage, cascade-connected FET
structure to ensure flat gain and power as well as uniform
group delay. E-beam lithography is used to produce
uniform gate lengths of 0.15um and MBE technology
assures precise semiconductor layer control.
Pin Connections (Top View)
RoHS-Exemption
Pin Function
1 Vaux
2 Not Used
3 Not Used
4 RFout / Vdd
5 Vg1
6 Not Used
7 Vg2
8 RFin
Please refer to Hazardous substances table on page 11.
Features
Surface Mount Package 5.0 x 5.0 x 2.0 mm
Wide Frequency Range 30kHz – 40GHz
High Gain: 14.8 dB Typical @ 22GHz
Output P1dB: 22 dBm Typical @ 22GHz
50 Ohm Input and Output Match
Applications [1]
Broadband Test and Measurement Applications
Notes:
1. Use in hermetic assemblies only.
Attention:
Observe precautions for handling
electrostatic sensitive devices.
ESD Machine Model (Class A): 40V
ESD Human Body Model (Class 0): 150V
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Table 1. Absolute Maximum Ratings[1]
Symbol
Parameters and Test Conditions
Vdd Positive Drain Voltage
Idd Total Drain Current
Vg1 First Gate Voltage
Ig1 First Gate Current
Vg2 Second Gate Voltage
Ig2 Second Gate Current
Pin CW Input Power
Tch Operating Channel Temperature
Tstg Storage Case Temperature
Tmax Maximum Assembly Temperature (20 sec max)
Unit
Minimum
Maximum
V - 10
mA -
380
V -9.5
0
mA -38 1
V -3.5
4
mA -20
-
dBm - 17
°C -
+150
°C -65
+150
°C -
+260
Note:
1) Operation in excess of any one of these conditions may result in permanent damage to this device. The absolute maximum ratings
for DC and Power parameters were determined at an ambient temperature of 25°C unless noted otherwise.





 AMMP-5024
Table 2. DC Specifications
( Vdd = 7V , Vg2 = Open, TA = 25°C, otherwise specified)
Symbol
Parameters and Test Conditions
Vdd
Idd
Vg1
Idss
Idsmin (Vg1)
qch-b
Recommended Drain Supply Voltage
Total Drain Supply Current (Vg1 set for typical Idd)
First Gate Voltage (Vdd = 7V, Idd = 200mA)
Saturated Drain Current (Vg1 = 0V)
First Gate Minimum Drain Current (Vg1 = -7V)
Thermal Resistance [1]
Unit
V
mA
V
mA
mA
°C/W
Note:
1) Channel-to-board Thermal Resistance is measured using Infrared Microscopy method.
www.DataSheet4U.com
Minimum Typical
- 7
- 200
-2.5 -3.0
- 350
- 80
- 14.5
Maximum
-
-
-3.5
-
-
-
Table 3. RF Specifications [1]
( Freq = 22 GHz, Vdd = 7V, Idd = 200mA, TA = 25°C, Zin = Zo = 50Ohm)
Symbol
Parameters and Test Conditions
Unit
Minimum Typical Maximum
Gain Small Signal Gain [2]
ISO Reverse Isolation
RLin Input Return Loss
RLout Output Return Loss
NF Noise Figure
P1dB Output Power at 1dB Gain Compression
OIP3 Output 3rd Order Intercept Point [3]
dB 12.5 14.8 16.5
dB -
30 -
dB - 13 -
dB - 14 -
dB -
4.6 -
dBm -
22 -
dBm -
25 -
Notes:
1) Specifications are derived from measurements in a 50 Ohm test environment. Aspects of the amplifier performance may be improved over a
narrower bandwidth by application of additional conjugate, linearity, or low noise matching.
2) All tested parameters guaranteed with measurement accuracy ± 0.5 dB for gain.
3) RFin1 = RFin2 = -5 dBm, Freq = 22GHz, Df = 100MHz
Table 4. RF Specifications [1]
( Freq = 22 GHz, Vdd = 4V, Idd = 160mA, TA = 25°C, Zin = Zo = 50Ohm)
Symbol
Parameters and Test Conditions
Unit
Gain Small signal Gain
ISO Reverse Isolation
RLin Input Return Loss
RLout Output Return Loss
NF Noise Figure
P1dB Output Power at 1dB Gain Compression
OIP3 Output 3rd Order Intercept Point [3]
dB
dB
dB
dB
dB
dBm
dBm
Minimum Typical
- 15
- 27
- 13
- 14
- 4.6
- 19
- 18.5
Maximum
-
-
-
-
-
-
-
Notes:
1) Specifications are derived from measurements in a 50 Ohm test environment. Aspects of the amplifier performance may be improved over a
narrower bandwidth by application of additional conjugate, linearity, or low noise matching.
2) RFin1 = RFin2 = -5 dBm, Freq = 22GHz, Df = 100MHz





 AMMP-5024
AMMP-5024 Typical Performance
(Vdd = 7V, Idd = 200mA, Vg2 = Open, TA = 25°C, Zin = Zo = 50Ohm)
www.DataSheet4U.com
20 0
10 -20
0 -40
-10
S21
S12
-60
-20 -80
0 5 10 15 20 25 30 35 40
FREQUENCY (GHz)
Figure 1. Gain and Reverse Isolation.
0
-5
-10
-15
-20
-25
-30
-35
S21
S12
-40
0 5 10 15 20 25 30 35 40
FREQUENCY (GHz)
Figure 2. Return Loss (Input and Output).
30
25
20
15
10
5
P1dB
P3dB
0
0 5 10 15 20 25 30 35 40
FREQUENCY (GHz)
Figure 3. Output Power (P1dB and P3dB).
50
40
30
20
10
0
0 5 10 15 20 25 30 35 40
FREQUENCY (GHz)
Figure 4. Output IP3.
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40
FREQUENCY (GHz)
Figure 5. Noise Figure.







Recommended third-party AMMP-5024 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)