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Linearity LNA. AMMP-6232 Datasheet

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Linearity LNA. AMMP-6232 Datasheet






AMMP-6232 LNA. Datasheet pdf. Equivalent




AMMP-6232 LNA. Datasheet pdf. Equivalent





Part

AMMP-6232

Description

18 to 32 GHz GaAs High Linearity LNA

Manufacture

AVAGO TECHNOLOGIES

Datasheet
Download AMMP-6232 Datasheet


AVAGO TECHNOLOGIES AMMP-6232

AMMP-6232; AMMP-6232 18 to 32 GHz GaAs High Linear ity LNA in SMT Package www.DataSheet4U .com Data Sheet Description Avago’s AMMP-6232 is an easy-to-use broadband, high gain, high linearity Low Noise Am plifier in a surface mount package. The wide band and unconditionally stable p erformance makes this MMIC ideal as a p rimary or subsequential low noise block or a transmitter dr.


AVAGO TECHNOLOGIES AMMP-6232

iver. The MMIC has 4 gain stages and req uires a 4V, 138mA power supply for opti mal performance. Since this MMIC covers several bands, it can reduce part inve ntory and increase volume purchase opti ons The MMIC is fabricated using PHEMT technology. The surface mount package e liminates the need of “chip & wire” assembly for lower cost. This MMIC is fully SMT compatible w.


AVAGO TECHNOLOGIES AMMP-6232

ith backside grounding and I/Os. Featur es • • • • • • • • • • • Surface Mount P ackage, 5.0 x 5.0 x 1.25 mm Single Powe r Supply Pin Unconditionally Stable 50O hm Input and Output Match Specificatio ns (Vdd = 4.0V, Idd = 138mA) RF Frequen cies: 18 - 32 GHz High Output IP3: 29 dBm High Small-Signal Gain: 23dB Typica l Noise Figure: 3dB Pin Connections (Top .



Part

AMMP-6232

Description

18 to 32 GHz GaAs High Linearity LNA

Manufacture

AVAGO TECHNOLOGIES

Datasheet
Download AMMP-6232 Datasheet




 AMMP-6232
AMMP-6232
18 to 32 GHz GaAs High Linearity LNA in SMT Package
Data Sheet
www.DataSheet4U.com
Description
Avago’s AMMP-6232 is an easy-to-use broadband, high
gain, high linearity Low Noise Amplifier in a surface mount
package. The wide band and unconditionally stable
performance makes this MMIC ideal as a primary or sub-
sequential low noise block or a transmitter driver.The MMIC
has 4 gain stages and requires a 4V, 138mA power supply
for optimal performance. Since this MMIC covers several
bands, it can reduce part inventory and increase volume
purchase options The MMIC is fabricated using PHEMT
technology. The surface mount package eliminates the
need of “chip & wire” assembly for lower cost. This MMIC is
fully SMT compatible with backside grounding and I/Os.
Pin Connections (Top View)
123
100pF
8
100pF
76 5
Top view
Package base: GND
Pin Function
1
2 Vdd
3
4 4 RFout
5
6 Vg
7
8 RFin
Features
Surface Mount Package, 5.0 x 5.0 x 1.25 mm
Single Power Supply Pin
Unconditionally Stable
50Ohm Input and Output Match
Specifications (Vdd = 4.0V, Idd = 138mA)
RF Frequencies: 18 - 32 GHz
High Output IP3: 29dBm
High Small-Signal Gain: 23dB
Typical Noise Figure: 3dB
Applications
Microwave Radio systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access
(including 802.16 and 802.20 WiMax)
WLL and MMDS loops
Commercial grade military
Note:
1. This MMIC uses depletion mode pHEMT devices.
2. Negative voltage is used for the gate bias
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control






 AMMP-6232
Absolute Maximum Ratings [1]
www.DataSheet4U.com
Parameters / Conditions
Drain to Ground Voltage
Gate-Drain Voltage
Drain Current
Gate Bias Voltage
Gate Bias Current
RF CW Input Power Max
Max channel temperature
Storage temperature
Maximum Assembly Temp
Symbol
Vdd
Vgd
Idd
Vg
Ig
Pin
Tch
Tstg
Tmax
Unit
V
V
mA
V
mA
dBm
C
C
C
Max
5.5
-8
200
+0.8
1
10
+150
-65 +150
260 for 20s
1. Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vdd, Vgd, Idd,
Vg, Ig and Pin were determined at an ambient temperature of 25°C unless noted otherwise.
DC Specifications/ Physical Properties [2]
Parameter and Test Condition
Drain Supply Current (Vd=4.0 V)
Drain Supply Voltage
Gate Bias Current
Gate Bias Voltage
Thermal Resistance(3)
Symbol
Idd
Vd
Ig
Vg
θjc
Unit
mA
V
mA
V
°C/W
Min
3
-1.1
Typ Max
135 150
45
0.1
-0.95 -0.8
35.1
2. Ambient operational temperature TA=25°C unless noted
3. Channel-to-backside Thermal Resistance (Tchannel = 34°C) as measured using infrared microscopy. Thermal Resistance at
backside temp. (Tb) = 25°C calculated from measured data.
AMMP-6232 RF Specifications [4]
TA= 25°C, Vdd = 4.0 V, Idd =135 mA, Zo=50 W
Parameters and Test Conditions
Small-Signal Gain[5]
Noise Figure into 50W[5]
Output Power at 1dB Gain Compression
Output Power at 3dB Gain Compression
Output Third Order Intercept Point
Isolation
Input Return Loss
Output Return Loss
Freq. (GHz)
20, 26, 29
20, 26, 29
Symbol
Gain
NF
P-1dB
Psat
OIP3
Iso
RLin
RLout
Units
dB
dB
dBm
dBm
dBm
dB
dB
dB
Minimum
19
Typical
23
3
18
20
29
-45
-10
-10
4. Refer to characteristic plots for detailed individual frequency performance.
5. All tested parameters guaranteed with measurement accuracy ± 1.5dB for gain and ±0.4dB for NF.
Maximum Sigma
4.5






 AMMP-6232
AMMP-6232 Typical Performance [1], [2]
(TA = 25°C, Vdd=4V, Idd=138mA, Zin = Zout = 50 W unless noted)
www.DataSheet4U.com
40
30
20
10
0
15 20 25 30
Frequency (GHz)
Figure 1. Small-signal Gain
35
5
4
3
2
1
0
18 20 22 24 26 28 30 32
Frequency (GHz)
Figure 2. Noise Figure
0
-5
-10
-15
-20
-25
15
20 25 30
Frequency (GHz)
Figure 3. Input Return Loss
35
20
15
10
5
0
18 20 22 24 26 28 30 32
Frequency (GHz)
Figure 4. Output P-1dB
0
-5
-10
-15
-20
-25
15 20 25 30
Frequency (GHz)
Figure 5. Output Return Loss
35
30
25
20
15
10
5
18 20 22 24 26 28 30 32
Frequency (GHz)
Figure 6. Output IP3
Note:
1. S-parameters are measured on R&D Eval Board as shown in Figure 20. Effects of connectors and board traces are included in results.
2. Noise Figure is measured on R&D Eval Board as shown in Figure 20, and with a 3dB pad at the input. Board and Connector losses are already de-
embeded from the data.




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