Document
AMMP-6408
6 to 18 GHz 1 W Power Amplifier in SMT Package
www.DataSheet4U.com
Data Sheet
Description
The AMMP-6408 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 6 GHz and 18 GHz. At 8 GHz, it provides 29 dBm of output power (P-1dB) and 20 dB of small-signal gain from a small easy-to-use device. This MMIC optimized for linear operation with an output third order intercept point (OIP3) of 38 dBm.
Features
• • • • • • 5 x 5 mm Surface Mount Package Wide frequency range 6-18 GHz Highly linear: OIP3 = 38 dBm Integrated RF power detector ESD protection (50 V MM, and 250 V HBM) Input port partially matched (For narrowband applications, customer may obtain optimum matching and gain with an additional matching circuit.)
Pin Connections (Top View)
1 2 3
Specifications (Vd = 5 V, Idsq = 650 mA)
• • • •
4
Frequency range 6 to 18 GHz Small signal gain of 18 dB Return loss: input: -3 dB, Output: -9 dB High Power: @ 8 GHz, P-1dB = 29 dBm
8
Application
• • • • Microwave radio systems Satellite VSAT, DBS Up/Down Link LMDS & Pt-Pt mmW Long Haul Broadband wireless access (including 802.16 and 802.20 WiMax) • WLL and MMDS loops • Commercial grade military
7 PIN 1 2 3 4 5 6 7 8
6 FUNCTION Vgg Vdd DET_O RF_out DER_R Vdd Vgg RF_in
5 PACKAGE BASE GND
Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Avago Technologies Application Note A004R: Electrostatic Discharge, Damage and Control. Note: This MMIC uses depletion mode pHEMT devices. Negative supply is used for the DC gate biasing.
Absolute Maximum Ratings[1]
Symbol Vd Vg Id PD Pin Tch, max Tstg Tmax Parameters[1] Positive Supply Voltage Gate Supply Voltage Drain Current Power Dissipation CW Input Power Maximum Operating Channel Temperature Storage Case Temperature Maximum Assembly Temp (20 sec. max.) Units V V mA W dBm °C °C °C Value 6 -3 to 0.5 900 4.6 23 +155 -65 to +155 +260
www.DataSheet4U.com
Notes note 2
note 2,3 note 2 note 4,5
Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD. 3. When operating at this condition with a base plate temperature of 85°C, the median time to failure (MTTF) is significantly reduced. 4. These ratings apply to each individual FET. 5. Junction operating temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
DC Specifications/Physical Properties
Symbol Id Vg Rqjc Tch Parameters and Test Conditions Drain Supply Current (Vd = 5 V, Vg set for Id Typical) Gate Supply Operating Voltage (Id(Q) = 650 (mA)) Thermal Resistance[6] (Channel-to-Base Plate) Channel Temperature Units mA V °C/W °C Value 650 -1.1 20 150.6
Note: 6. Assume SnPb soldering to an evaluation RF board at 80°C base plate temperatures. Worst case for the channel temperature is under the quiescent operation. At saturated output power, DC power consumption rises to 4.26 W with 1.14 W RF power delivered to load. Power dissipation is 3.11 W and the temperature rise in the channel is 68.4°C. In this condition, the base plate temperature must be remained below 86.6°C to maintain maximum operating channel temperature below 155°C.
RF Specifications[1,2,3,4]
Symbol Freq. Gain P-1dB P-3dB OIP3 RLin RLout Isolation
TA = 25°C, Vd = 5 V, Id(Q) = 650 mA, Zo = 50 Ω Parameters and Test Conditions Operational Frequency Small-Signal Gain S21[3,4] Output Power at 1 dB[3] Gain Compression[2] Output Power at 3 dB Gain Compression[3] Third Order Intercept Point; ∆f = 100 MHz; Pin = -20 dBm Input Return Loss[2] Output Return Loss[2] Reverse Isolation Units GHz dB dBm dBm dBm dB dB dB Minimum 6 17.5 (@ Freq = 8 GHz) 15.5 (@ Freq = 17 GHz) 28 (@ Freq = 8 GHz) 27 (@ Freq = 17 GHz) Typical 18 28.5 29.5 38 3 9 45 Maximum 18
Notes: 1. Small/large-signal data measured in packaged form on a 2.4 mm connecter based evaluation board at TA = 25°C. 2. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies. 3. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity, or power matching. 4. Preassembly into package performance verified 100% on-wafer published specifications at frequencies = 7, 12, and 17 GHz.
www.DataSheet4U.com Typical Performances (Data Obtained from 3.5-mm Connector Based Test Fixture, and This Data is Including Connecter Loss, and Board Loss.)
(TA = 25°C, Vd = 5 V, ID = 650 mA, Zin = Zout = 50 Ω)
40 35 30 S21 (dB) 25 20 15 10 5 0 2 4 6 8 10 12 14 16 18 20 S21 (dB) S12 (dB).