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Power Amplifer. AMMP-6408 Datasheet

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Power Amplifer. AMMP-6408 Datasheet






AMMP-6408 Amplifer. Datasheet pdf. Equivalent




AMMP-6408 Amplifer. Datasheet pdf. Equivalent





Part

AMMP-6408

Description

6 to 18 GHz 1 W Power Amplifer

Manufacture

AVAGO TECHNOLOGIES

Datasheet
Download AMMP-6408 Datasheet


AVAGO TECHNOLOGIES AMMP-6408

AMMP-6408; AMMP-6408 6 to 18 GHz 1 W Power Amplifi er in SMT Package www.DataSheet4U.com Data Sheet Description The AMMP-6408 MMIC is a broadband 1W power amplifier in a surface mount package designed fo r use in transmitters that operate in v arious frequency bands between 6 GHz and 18 GHz. At 8 GHz, it provides 2 9 dBm of output power (P-1dB) and 20 dB of small-signal gain fr.


AVAGO TECHNOLOGIES AMMP-6408

om a small easy-to-use device. This MMIC optimized for linear operation with an output third order intercept point (OI P3) of 38 dBm. Features • • • • • 5 x 5 mm Surface Mount Package Wide frequency range 6-18 GHz Highly linear: OIP3 = 38 dBm Integ rated RF power detector ESD protection (50 V MM, and 250 V HBM) Input port par tially matched (For narrowband a.


AVAGO TECHNOLOGIES AMMP-6408

pplications, customer may obtain optimum matching and gain with an additional m atching circuit.) Pin Connections (Top View) 1 2 3 Specifications (Vd = 5 V, Idsq = 650 mA) • • • • 4 Frequency range 6 to 18 GHz Small signa l gain of 18 dB Return loss: input: -3 dB, Output: -9 dB High Power: @ 8 GHz, P-1dB = 29 dBm 8 Application • • • • Microwave radio system.



Part

AMMP-6408

Description

6 to 18 GHz 1 W Power Amplifer

Manufacture

AVAGO TECHNOLOGIES

Datasheet
Download AMMP-6408 Datasheet




 AMMP-6408
AMMP-6408
6 to 18 GHz 1 W Power Amplifier in SMT Package
Data Sheet
www.DataSheet4U.com
Description
The AMMP-6408 MMIC is a broadband 1W power
amplifier in a surface mount package designed for use
in transmitters that operate in various frequency bands
between 6 GHz and 18 GHz. At 8 GHz, it provides 29 dBm
of output power (P-1dB) and 20 dB of small-signal gain
from a small easy-to-use device. This MMIC optimized
for linear operation with an output third order intercept
point (OIP3) of 38 dBm.
Pin Connections (Top View)
123
84
765
PIN FUNCTION
1 Vgg
2 Vdd
3 DET_O
4 RF_out
5 DER_R
6 Vdd
7 Vgg
8 RF_in
PACKAGE
BASE
GND
Features
5 x 5 mm Surface Mount Package
Wide frequency range 6-18 GHz
Highly linear: OIP3 = 38 dBm
Integrated RF power detector
ESD protection (50 V MM, and 250 V HBM)
Input port partially matched
(For narrowband applications, customer may obtain
optimum matching and gain with an additional
matching circuit.)
Specifications (Vd = 5 V, Idsq = 650 mA)
Frequency range 6 to 18 GHz
Small signal gain of 18 dB
Return loss: input: -3 dB, Output: -9 dB
High Power: @ 8 GHz, P-1dB = 29 dBm
Application
Microwave radio systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband wireless access (including 802.16 and
802.20 WiMax)
WLL and MMDS loops
Commercial grade military
Attention: Observe precautions for handling
electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Technologies Application Note
A004R: Electrostatic Discharge, Damage and
Control.
Note: This MMIC uses depletion mode pHEMT
devices. Negative supply is used for the DC
gate biasing.






 AMMP-6408
Absolute Maximum Ratings[1]
www.DataSheet4U.com
Symbol
Vd
Vg
Id
PD
Pin
Tch, max
Tstg
Tmax
Parameters[1]
Positive Supply Voltage
Gate Supply Voltage
Drain Current
Power Dissipation
CW Input Power
Maximum Operating Channel Temperature
Storage Case Temperature
Maximum Assembly Temp (20 sec. max.)
Units
V
V
mA
W
dBm
°C
°C
°C
Value
6
-3 to 0.5
900
4.6
23
+155
-65 to +155
+260
Notes
note 2
note 2,3
note 2
note 4,5
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. When operating at this condition with a base plate temperature of 85°C, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET.
5. Junction operating temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
DC Specifications/Physical Properties
Symbol
Parameters and Test Conditions
Units
Value
Id
Drain Supply Current (Vd = 5 V, Vg set for Id Typical)
mA
650
Vg
Gate Supply Operating Voltage (Id(Q) = 650 (mA))
V
-1.1
Rqjc Thermal Resistance[6] (Channel-to-Base Plate)
°C/W
20
Tch Channel Temperature
°C 150.6
Note:
6. Assume SnPb soldering to an evaluation RF board at 80°C base plate temperatures. Worst case for the channel temperature is under the
quiescent operation. At saturated output power, DC power consumption rises to 4.26 W with 1.14 W RF power delivered to load. Power
dissipation is 3.11 W and the temperature rise in the channel is 68.4°C. In this condition, the base plate temperature must be remained below
86.6°C to maintain maximum operating channel temperature below 155°C.
RF Specifications[1,2,3,4]
TA = 25°C, Vd = 5 V, Id(Q) = 650 mA, Zo = 50 Ω
Symbol
Freq.
Gain
Parameters and Test Conditions
Operational Frequency
Small-Signal Gain S21[3,4]
P-1dB
P-3dB
OIP3
RLin
RLout
Isolation
Output Power at 1 dB[3]
Gain Compression[2]
Output Power at 3 dB Gain Compression[3]
Third Order Intercept Point;
∆f = 100 MHz; Pin = -20 dBm
Input Return Loss[2]
Output Return Loss[2]
Reverse Isolation
Units
GHz
dB
dBm
dBm
dBm
Minimum
6
17.5 (@ Freq = 8 GHz)
15.5 (@ Freq = 17 GHz)
28 (@ Freq = 8 GHz)
27 (@ Freq = 17 GHz)
Typical
18
28.5
29.5
38
dB 3
dB 9
dB 45
Maximum
18
Notes:
1. Small/large-signal data measured in packaged form on a 2.4 mm connecter based evaluation board at TA = 25°C.
2. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies.
3. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a
narrower bandwidth by application of additional conjugate, linearity, or power matching.
4. Preassembly into package performance verified 100% on-wafer published specifications at frequencies = 7, 12, and 17 GHz.






 AMMP-6408
Typical Performances
www.DataSheet4U.com
(Data Obtained from 3.5-mm Connector Based Test Fixture, and This Data is Including Connecter Loss, and Board Loss.)
(TA = 25°C, Vd = 5 V, ID = 650 mA, Zin = Zout = 50 Ω)
40 0
35
S21 (dB)
S12 (dB)
30 -20
25
20 -40
15
10 -60
5
0 -80
2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Figure 1. Typical gain and reverse isolation
0
-5
-10
-15
S11 (dB)
S22 (dB)
-20
2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Figure 2. Typical return loss (input and output)
35
30
25
20
15
10
P-1 (dBm)
PAE (%) @ P-1
5
P-3 (dBm)
PAE (%) @ P-3
0
6 7 8 9 10 11 12 13 14 15 16 17 18
FREQUENCY (GHz)
Figure 3. Typical output power (@P-1, P-3) and PAE and frequency
10
8
6
4
2
0
4 6 8 10 12 14 16 18 20
FREQUENCY (GHz)
Figure 4. Typical noise figure
40
35
30
25
20
15
10
5
0
-15
Pout (dBm)
PAE (%)
Id (TOTAL)
-10 -5 0 5
Pin (dBm)
1000
900
800
700
600
10 15
Figure 5. Typical output power, PAE, and total drain current versus input
power at 8 GHz
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
4 6 8 10 12 14 16 18 20
FREQUENCY (GHz)
Figure 6. Typical IM3 level vs. frequency at +20 dBm output single carrier
level (SCL)




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