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Power Amplifier. AMMP-6425 Datasheet

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Power Amplifier. AMMP-6425 Datasheet






AMMP-6425 Amplifier. Datasheet pdf. Equivalent




AMMP-6425 Amplifier. Datasheet pdf. Equivalent





Part

AMMP-6425

Description

18-28 GHz 1W Power Amplifier



Feature


AMMP-6425 18-28 GHz 1W Power Amplifier in SMT Package www.DataSheet4U.com Da ta Sheet Description The AMMP-6425 MMI C is a broadband 1W power amplifier in a surface mount package designed for us e in transmitters that operate in vario us frequency bands between 18GHz and 28 GHz. At 25GHz, it provides 31dBm of out put power (P-1dB) and 25dB of small-sig nal gain from a sm.
Manufacture

AVAGO TECHNOLOGIES

Datasheet
Download AMMP-6425 Datasheet


AVAGO TECHNOLOGIES AMMP-6425

AMMP-6425; all easy-to-use device. The device has i nput and output matching circuitry for use in 50Ω environments. The AMMP-642 5 also integrates a temperature compens ated RF power detection circuit that en ables power detection of 0.25V/W. DC bi as is simple and the device operates on widely available 5V for current supply (negative voltage only needed for Vg). It is fabricated in.


AVAGO TECHNOLOGIES AMMP-6425

a PHEMT process for exceptional power a nd gain performance. Features • 5x5 mm Surface Mount Package • Wide Fre quency Range 18-28GHz • One watt out put power • 50 Ω match on input and output • ESD protection (60V MM, an d 200V HBM) Specifications (Vdd=5V, Id sq=650mA) • Frequency range 18 to 28 GHz • Small signal Gain of 22dB • Output power @P-1 of 28dBm (Typ.).


AVAGO TECHNOLOGIES AMMP-6425

• Input/Output return-loss of -12dB Pin Connections (Top View) 1 2 3 Appl ications • Microwave Radio systems Satellite VSAT, DBS Up/Down Link Pi n 1 2 3 4 5 6 7 8 Function Vgg Vdd DET_ O RF_out DET_R Vdd Vgg RF_in • LMDS & Pt-Pt mmW Long Haul • Broadband W ireless Access (including 802.16 and 80 2.20 WiMax) • WLL and MMDS loops • Commercial grade military Note.

Part

AMMP-6425

Description

18-28 GHz 1W Power Amplifier



Feature


AMMP-6425 18-28 GHz 1W Power Amplifier in SMT Package www.DataSheet4U.com Da ta Sheet Description The AMMP-6425 MMI C is a broadband 1W power amplifier in a surface mount package designed for us e in transmitters that operate in vario us frequency bands between 18GHz and 28 GHz. At 25GHz, it provides 31dBm of out put power (P-1dB) and 25dB of small-sig nal gain from a sm.
Manufacture

AVAGO TECHNOLOGIES

Datasheet
Download AMMP-6425 Datasheet




 AMMP-6425
AMMP-6425
18-28 GHz 1W Power Amplifier in SMT Package
Data Sheet
www.DataSheet4U.com
Description
The AMMP-6425 MMIC is a broadband 1W power
amplifier in a surface mount package designed for use
in transmitters that operate in various frequency bands
between 18GHz and 28GHz. At 25GHz, it provides 31dBm
of output power (P-1dB) and 25dB of small-signal gain
from a small easy-to-use device. The device has input
and output matching circuitry for use in 50Ω environ-
ments. The AMMP-6425 also integrates a temperature
compensated RF power detection circuit that enables
power detection of 0.25V/W. DC bias is simple and the
device operates on widely available 5V for current supply
(negative voltage only needed for Vg). It is fabricated in
a PHEMT process for exceptional power and gain perfor-
mance.
Pin Connections (Top View)
12
8
76
RoHS-Exemption
3
4
Pin Function
1 Vgg
2 Vdd
3 DET_O
4 RF_out
5 DET_R
6 Vdd
7 Vgg
8 RF_in
5
PACKAGE
BASE
GND
Features
5x5 mm Surface Mount Package
Wide Frequency Range 18-28GHz
One watt output power
50 Ω match on input and output
ESD protection (60V MM, and 200V HBM)
Specifications (Vdd=5V, Idsq=650mA)
Frequency range 18 to 28 GHz
Small signal Gain of 22dB
Output power @P-1 of 28dBm (Typ.)
Input/Output return-loss of -12dB
Applications
Microwave Radio systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access (including 802.16 and
802.20 WiMax)
WLL and MMDS loops
Commercial grade military
Note:
1. This MMIC uses depletion mode pHEMT devices. Negative supply is
used for DC gate biasing.
Attention:
Observe Precautions for
handling electrostatic
sensitive devices.
Please refer to Hazardous substances table on page 11.
ESD Machine Model (Class A): 60V
ESD Human Body Model (Class 0): 200V
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.




 AMMP-6425
Absolute Maximum Ratings [1]
www.DataSheet4U.com
Symbol
Parameters [1]
Units Value
Notes
Vdd Positive Supply Voltage
V6
2
Vg Gate Supply Voltage
V -3 to 0.5
Idq Drain Current
mA 700
PD Power Dissipation
W 5.5 2, 3
Pin CW Input Power
dBm 23
2
Tch, max
Maximum Operating Channel Temp.
°C +155 4, 5
Tstg Storage Case Temp.
°C -65 to +155
Tmax Maximum Assembly Temp (20 sec max)
°C +260
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. When operate at this condition with a base plate temperature of 85°C, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET
5. Junction operating temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
DC Specifications/ Physical Properties [6]
Symbol
Parameters and Test Conditions
Units Value
Idq Drain Supply Current (Vdd=5 V, Vg set for Idq Typical)
mA 650
Vg Gate Supply Operating Voltage (Id(Q) = 650 (mA))
RθJC Thermal Resistance[6] (Channel-to-Base Plate)
V -1.1
°C/W 17.8
Tch Channel Temperature
°C 142.8
Notes:
6. Assume SnPb soldering to an evaluation RF board at 85°C base plate temperatures. Worst case is at saturated output power when DC power
consumption rises to 5.5W with 1.58W RF power delivered to load. Power dissipation is 3.92W and the temperature rise in the channel is 69.8
°C. In this condition, the channel temperature reached at the maximum operational channel temperature of 155°C. To maintain the maximum
operational temperature below 155°C, the base plate temperature must be maintained below 85°C
AMMP-6425 RF Specifications [1, 2, 3, 4]
(Data obtained from 2.4-mm connector based test fixture, and this data is including connecter loss, and board loss.)
TA= 25°C, Vdd = 5.0 V, Idq =650 mA, Vg = -1.1V, Zo=50Ω
Symbol
Parameters and Test Conditions
Units Minimum Typical
Maximum
Freq Operational Frequency
GHz 18
28
Gain Small-signal Gain[3, 4] Freq (GHz) = 18, 23
Freq (GHz) = 28
dB 21
dB 20
23
22
P-1dB Output Power at 1dB[3] Gain Compression Freq (GHz) = 18 dBm 26
Freq (GHz) = 23, 28 dBm
27
28
28
OIP3 Output Third Order Intercept Point
dBm 35
RLin Input Return Loss
RLout Output Return Loss
dB 10
dB 10
Isolation
Reverse Isolation
dB 43
Notes:
1. Small/Large -signal data measured in packaged form on a 2.4mm connecter based evaluation board at TA = 25°C.
2. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies
3. Specifications are derived from measurements in a 50Ω test environment. Aspects of the amplifier performance may be improved over a
narrower bandwidth by application of additional conjugate, linearity, or power matching.
4. Pre-assembly into package performance verified 100% on-wafer published specifications at Frequencies=18, 23, and 28GHz.
5. The Gain and P1dB tested at 18, 23 and 28 GHz guaranteed with measurement accuracy ±1.5dB for Gain and P1dB, except Gain at 18 GHz with
measurement accuracy ±1.8dB.





 AMMP-6425
AMMP-6425 Typical Performance
www.DataSheet4U.com
(Data obtained from 2.4-mm connector based test fixture, and this data is including connecter loss, and board loss.)
(TA = 25°C, Vdd=5V, Idq=650mA, Vg=-1.1 V, Zin = Zout = 50Ω)
30 -30
S21[dB]
25
S12[dB]
20
15
10
5
0 -50
15 17 19 21 23 25 27 29 31 33 35
Frequency [GHz]
Figure 1. Typical Gain and Reverse Isolation
0
S11[dB]
-5 S22[dB]
-10
-15
-20
-25
15 17 19 21 23 25 27
Frequency [GHz]
Figure 2. Typical Input & Output Return Loss
29 31 33 35
35
30
25
20
15
10
5
0
18 19 20 21
Figure 3. Typical P-1 and PAE
22 23 24
Frequency[GHz]
P-1
PAE, @P-1
P-3
PAE, @P-3
25 26 27 28
35
30
25
20
15
10
5
0
-20
-15 -10
-5 0
Pin [dBm]
Pout
PAE
Id
5 10
Figure 4. Typical Pout, Ids, and PAE vs. Pin at Freq=25GHz
1200
1000
800
600
400
200
0
-200
15
50
45
40
35
30
16 18 20 22 24 26
Frequency [GHz]
Figure 5. Typical IP3 (Third Order Intercept) @Pin=-20dBm
28
30

10
8
6
4
2
0
17 19 21 23 25 27 29 31
Frequency [GHz]
Figure 6. Typical Noise Figure






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