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Power Amplifier. AMMP-6430 Datasheet

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Power Amplifier. AMMP-6430 Datasheet






AMMP-6430 Amplifier. Datasheet pdf. Equivalent




AMMP-6430 Amplifier. Datasheet pdf. Equivalent





Part

AMMP-6430

Description

27-32GHz0.5W Power Amplifier



Feature


AMMP-6430 27-32 GHz 0.5W Power Amplifie r in SMT Package www.DataSheet4U.com Data Sheet Description The AMMP-6430 M MIC is a broadband 1W power amplifier i n a surface mount package designed for use in transmitters that operate in var ious frequency bands between 27GHz and 32GHz. At 30GHz, it provides 29dBm of o utput power (P-1dB) and 19dB of small-s ignal gain from a .
Manufacture

AVAGO TECHNOLOGIES

Datasheet
Download AMMP-6430 Datasheet


AVAGO TECHNOLOGIES AMMP-6430

AMMP-6430; small easy-to-use device. The device has input and output matching circuitry fo r use in 50Ω environments. The AMMP-6 430 also integrates a temperature compe nsated RF power detection circuit that enables power detection of 0.3V/W. DC b ias is simple and the device operates o n widely available 5V for current suppl y (negative voltage only needed for Vg) . It is fabricated i.


AVAGO TECHNOLOGIES AMMP-6430

n a PHEMT process for exceptional power and gain performance. Features • Wi de Frequency Range 27-32GHz • Half w att output power • 50 Ω match on in put and output • ESD protection (50V MM, and 150V HBM) • Specifications (Vd=5V, Idsq=650mA) • Frequency rang e 27 to 32 GHz • Small signal Gain o f 20dB • Output power @P-1 of 27dBm (Typ.) • Input/Output return-loss .


AVAGO TECHNOLOGIES AMMP-6430

of -10dB Applications • Microwave Ra dio systems • Satellite VSAT, DBS Up /Down Link • LMDS & Pt-Pt mmW Long H aul Pin Connections (Top View) 1 2 3 8 4 Pin 1 2 3 4 5 6 7 8 Function Vgg Vdd DET_O RF_out DET_R Vdd Vgg RF_in • Broadband Wireless Access (includi ng 802.16 and 802.20 WiMax) • WLL an d MMDS loops • Commercial grade mili tary Note: 1. This MMIC uses.

Part

AMMP-6430

Description

27-32GHz0.5W Power Amplifier



Feature


AMMP-6430 27-32 GHz 0.5W Power Amplifie r in SMT Package www.DataSheet4U.com Data Sheet Description The AMMP-6430 M MIC is a broadband 1W power amplifier i n a surface mount package designed for use in transmitters that operate in var ious frequency bands between 27GHz and 32GHz. At 30GHz, it provides 29dBm of o utput power (P-1dB) and 19dB of small-s ignal gain from a .
Manufacture

AVAGO TECHNOLOGIES

Datasheet
Download AMMP-6430 Datasheet




 AMMP-6430
AMMP-6430
27-32 GHz 0.5W Power Amplifier in SMT Package
Data Sheet
www.DataSheet4U.com
Description
The AMMP-6430 MMIC is a broadband 1W power
amplifier in a surface mount package designed for use
in transmitters that operate in various frequency bands
between 27GHz and 32GHz. At 30GHz, it provides 29dBm
of output power (P-1dB) and 19dB of small-signal gain
from a small easy-to-use device. The device has input
and output matching circuitry for use in 50Ω environ-
ments. The AMMP-6430 also integrates a temperature
compensated RF power detection circuit that enables
power detection of 0.3V/W. DC bias is simple and the
device operates on widely available 5V for current supply
(negative voltage only needed for Vg). It is fabricated in
a PHEMT process for exceptional power and gain perfor-
mance.
Pin Connections (Top View)
12
8
76
RoHS-Exemption
3
4
Pin Function
1 Vgg
2 Vdd
3 DET_O
4 RF_out
5 DET_R
6 Vdd
7 Vgg
8 RF_in
5
PACKAGE
BASE
GND
Features
Wide Frequency Range 27-32GHz
Half watt output power
50 Ω match on input and output
ESD protection (50V MM, and 150V HBM)
Specifications (Vd=5V, Idsq=650mA)
Frequency range 27 to 32 GHz
Small signal Gain of 20dB
Output power @P-1 of 27dBm (Typ.)
Input/Output return-loss of -10dB
Applications
Microwave Radio systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access (including 802.16 and
802.20 WiMax)
WLL and MMDS loops
Commercial grade military
Note:
1. This MMIC uses depletion mode pHEMT devices. Negative supply is
used for DC gate biasing.
Attention:
Observe Precautions for
handling electrostatic
sensitive devices.
Please refer to Hazardous substances table on page 11.
ESD Machine Model (Class A): 50V
ESD Human Body Model (Class 0): 150V
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.




 AMMP-6430
Absolute Maximum Ratings [1]
www.DataSheet4U.com
Symbol
Parameters [1]
Units Value
Notes
Vd Positive Supply Voltage
V6
2
Vg Gate Supply Voltage
V -3 to 0.5
Idq Drain Current
mA 700
PD Power Dissipation
W 5.5 2, 3
Pin CW Input Power
dBm 23
2
Tch, max
Maximum Operating Channel Temp.
°C +155 4, 5
Tstg Storage Case Temp.
°C -65 to +155
Tmax Maximum Assembly Temp (20 sec max)
°C +260
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. When operate at this condition with a base plate temperature of 85 °C, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET
5. Junction operating temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
DC Specifications/ Physical Properties [6]
Symbol
Parameters and Test Conditions
Units Value
Idq Drain Supply Current (Vd=5 V, Vg set for Id Typical)
mA 650
Vg Gate Supply Operating Voltage (Id(Q) = 650 (mA))
V -1.1
RθJC Thermal Resistance[6] (Channel-to-Base Plate)
°C/W 16.8
Tch Channel Temperature
°C 139.6
Notes:
6. Assume SnPb soldering to an evaluation RF board at 85 °C base plate temperatures. Worst case is at saturated output power when DC power
consumption rises to 5.24W with 0.9W RF power delivered to load. Power dissipation is 4.34W and the temperature rise in the channel is 72.9 °C. In this
condition, the base plate temperature must be remained below 82.1 °C to maintain maximum operating channel temperature below 155 °C.
AMMP-6430 RF Specifications [1, 2, 3, 4]
TA= 25°C, Vdd = 5.0 V, Idq =650 mA, Vg = -1.1V, Zo=50Ω
Symbol
Parameters and Test Conditions
Units Minimum
Typical
Maximum
Freq Operational Frequency
GHz 27
32
Gain Small-signal Gain[3, 4] Freq = 27 GHz
dB 16
20
P-1dB Output Power at 1dB[3] Gain Compression
dBm 26
27
OIP3 Output Third Order Intercept Point
dBm
35
RLin Input Return Loss
dB 10
RLout Output Return Loss
dB 10
Isolation
Reverse Isolation
dB 43
Notes:
1. Small/Large -signal data measured in packaged form on a 2.4-mm connecter based evaluation board at TA = 25°C.
2. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies
3. Specifications are derived from measurements in a 50Ω test environment. Aspects of the amplifier performance may be improved over a
narrower bandwidth by application of additional conjugate, linearity, or power matching.
4. Pre-assembly into package performance verified 100% on-wafer published specifications at Frequencies=27, 30, and 32GHz
5. The Gain and P1dB tested at 27GHz guaranteed with measurement accuracy ± 1.5 dB for gain and ±1.6dB for P1dB.





 AMMP-6430
AMMP-6430 Typical Performance
www.DataSheet4U.com
(Data obtained from 2.4-mm connector based test fixture, and this data is including connecter loss, and board loss.)
(TA = 25°C, Vdd=5V, Idq=650mA, Vg=-1.1 V, Zin = Zout = 50Ω)
30
S21[dB]
25 S12[dB]
20
15
10
5
0
10 15 20 25 30
Frequency [GHz]
Figure 1. Typical Gain and Reverse Isolation
35
-30
-50
40 45
0
-5
-10
-15
-20
-25
10
15 20
25 30
Frequency [GHz]
Figure 2. Typical Input & Output Return Loss
S11[dB]
S22[dB]
35 40
45
35
30
25
20
15
10 P-1
PAE, @P-1
5 P-3
PAE, @P-3
0
24 25 26 27 28 29 30 31 32 33 34
Frequency[GHz]
Figure 3. Typical P-1 and PAE
40
Pout(dBm)
35
PAE[%]
30
Id(total)
25
1300
1200
1100
1000
20 900
15 800
10 700
5 600
0 500
-5
-25 -20 -15 -10 -5
0
Pin [dBm]
400
5 10 15 20
Figure 4. Typical Pout, Ids, and PAE vs. Pin at Freq=30GHz
46
44
42
40
38
36
34
32
30
25 26 27 28 29 30 31 32 33 34 35
Frequency [GHz]
Figure 5. Typical IP3 (Third Order Intercept) @Pin=-20dBm

10
8
6
4
2
0
24 26
28 30
32
Frequency [GHz]
34 36
Figure 6. Typical Noise Figure






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