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Noise Amplifier. TGA8399B-SCC Datasheet

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Noise Amplifier. TGA8399B-SCC Datasheet






TGA8399B-SCC Amplifier. Datasheet pdf. Equivalent




TGA8399B-SCC Amplifier. Datasheet pdf. Equivalent





Part

TGA8399B-SCC

Description

6-13 GHz Low Noise Amplifier



Feature


Product Data Sheet www.DataSheet4U.com October 14, 2005 6-13 GHz Low Noise Am plifier • • • • • • • • TGA8399B-SCC Key Features and Perform ance 6-13 GHz Frequency Range 1.5 dB Ty pical Noise Figure Midband 26 dB Nomina l Gain High Input Power Handling: ~ 20d Bm Balanced Input for Low VSWR 5V @ 65m A Self Bias 0.25um pHEMT Technology Chi p Dimensions 3.1 x 2.4 x 0.15 mm .
Manufacture

TriQuint Semiconductor

Datasheet
Download TGA8399B-SCC Datasheet


TriQuint Semiconductor TGA8399B-SCC

TGA8399B-SCC; Primary Applications • • Point-to-Po int Radio X Band Radar, ECM Descriptio n The TriQuint TGA8399B-SCC is a monoli thic selfbiased low noise amplifier wit h a balanced input for low VSWR. This L NA operates from 6 to 13 GHz with a typ ical mid band noise figure of 1.5 dB. T he device features high gain of 26 dB a cross the band, while providing a nomin al output power at P1d.


TriQuint Semiconductor TGA8399B-SCC

B gain compression of 11dBm. Typical inp ut and output return loss is 18 dB. Gro und is provided to the circuitry throug h vias to the backside metallization. T he TGA8399B-SCC low noise amplifier is suitable for a variety of commercial an d high frequency applications, C and X band applications such as radar receive rs, electronic counter measures, decoys , jammers and phas.


TriQuint Semiconductor TGA8399B-SCC

ed array systems. At 5V the drain curren t is approximately 65 mA and can be inc reased or decreased by selection of the appropriate source resistors in each s tage. For an application note concernin g drain current selection see: http://w ww.triquint.com/company/divisions/milli me ter_wave/AppNote_self_bias_of_8399b_ c2.pdf Lead-free and RoHS compliant Ty pical Electrical C.

Part

TGA8399B-SCC

Description

6-13 GHz Low Noise Amplifier



Feature


Product Data Sheet www.DataSheet4U.com October 14, 2005 6-13 GHz Low Noise Am plifier • • • • • • • • TGA8399B-SCC Key Features and Perform ance 6-13 GHz Frequency Range 1.5 dB Ty pical Noise Figure Midband 26 dB Nomina l Gain High Input Power Handling: ~ 20d Bm Balanced Input for Low VSWR 5V @ 65m A Self Bias 0.25um pHEMT Technology Chi p Dimensions 3.1 x 2.4 x 0.15 mm .
Manufacture

TriQuint Semiconductor

Datasheet
Download TGA8399B-SCC Datasheet




 TGA8399B-SCC
Product Data Sheet
October 14, 2005
www.DataSheet4U.com
6-13 GHz Low Noise Amplifier
TGA8399B-SCC
Key Features and Performance
• 6-13 GHz Frequency Range
• 1.5 dB Typical Noise Figure Midband
• 26 dB Nominal Gain
• High Input Power Handling: ~ 20dBm
• Balanced Input for Low VSWR
• 5V @ 65mA Self Bias
• 0.25um pHEMT Technology
• Chip Dimensions 3.1 x 2.4 x 0.15 mm
Primary Applications
• Point-to-Point Radio
• X Band Radar, ECM
Description
The TriQuint TGA8399B-SCC is a monolithic self-
biased low noise amplifier with a balanced input
for low VSWR. This LNA operates from 6 to 13
GHz with a typical mid band noise figure of 1.5
dB. The device features high gain of 26 dB
across the band, while providing a nominal output
power at P1dB gain compression of 11dBm.
Typical input and output return loss is 18 dB.
Ground is provided to the circuitry through vias to
the backside metallization. The TGA8399B-SCC
low noise amplifier is suitable for a variety of
commercial and high frequency applications, C
and X band applications such as radar receivers,
electronic counter measures, decoys, jammers
and phased array systems. At 5V the drain
current is approximately 65 mA and can be
increased or decreased by selection of the
appropriate source resistors in each stage. For
an application note concerning drain current
selection see:
http://www.triquint.com/company/divisions/millime
ter_wave/AppNote_self_bias_of_8399b_c2.pdf
Lead-free and RoHS compliant
Typical Electrical Characteristics
Self Bias, Vd=5V, 65mA
28
26 Gain
0
-3
24 -6
22 -9
20 -12
18
Output RL
-15
16 -18
14 -21
12 -24
10
Input RL
-27
8 -30
6 7 8 9 10 11 12 13
Frequency (GHz)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
6
Pout
NF
7 8 9 10 11 12
Frequency (GHz)
14
13
12
11
10
9
8
7
6
5
4
13
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
1




 TGA8399B-SCC
Product Data Sheet
October 14, 2005
www.DataSheet4U.com
TGA8399B-SCC
TABLE I
MAXIMUM RATINGS 5/
SYMBOL
PARAMETER
V+ Positive Supply Voltage
V- Negative Supply Voltage Range
I+ Positive Supply Current (Quiescent)
PIN Input Continuous Wave Power
PD
TCH
TM
TSTG
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
VALUE
8V
-5V TO 0V
100 mA
22 dBm
1.95W
150 0C
320 0C
-65 to 150 0C
NOTES
4/
4/
3/ 4/
1/ 2/
1/ These ratings apply to each individual FET.
2/ Junction operating temperature will directly affect the device median time to failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
3/ When operated at this bias condition with a base plate temperature of 70 0C, the median life is
reduced from 9.2E+8 to 2.5E+6 hours.
4/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
5/ These ratings represent the maximum operable values for this device.
TABLE II
DC PROBE TEST
(TA = 25 °C ± 5 °C)
NOTES SYMBOL
IDSS1
IMAX
Gm1
1/ |VP1,2,3,4,5|
1/ |VBVGD1|
1/ |VBVGS1|
LIMITS
MIN MAX
Information Only
169 290
99 239
0.5 1.5
8 30
8 30
UNITS
mA
mS
mS
V
V
V
1/ VP, VBVGD, and VBVGS are negative.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
2




 TGA8399B-SCC
NOTE
TEST
1/ Small Signal Gain
TABLE III
RF CHARACTERISTICS
(TA = 25°C + 5°C)
Product Data Sheet
October 14, 2005
www.DataSheet4U.com
TGA8399B-SCC
MEASUREMENT
CONDITIONS
Self Bias, Vd=5V
VALUE
UNITS
MIN TYP MAX
F = 6 - 13 GHz
23 26
dB
Power Output
F = 6 - 13 GHz
@ 1 dB Gain Compression
2/ Noise Figure
F = 6 - 13 GHz
F = 10 GHz
1/ Input Return Loss Magnitude F = 6 - 13 GHz
1/ Output Return Loss
Magnitude
F = 6 - 13 GHz
1/ RF probe data is taken at 1 GHz steps
2/ RF probe data is taken at 10 GHz.
11 dBm
2.0
2.5
-18 -9.5
dB
dB
dB
-18 -9.5 dB
TABLE IV
THERMAL INFORMATION
PARAMETER
TEST
CONDITIONS
RθJC Thermal Resistance Vd = 5 V
(channel to backside of ID = 65 mA
carrier)
Pdiss = 0.325 W
TCH RTJC TM
(OC) (qC/W) (HRS)
82.14 37.354 9.2E+8
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier
at 70°C baseplate temperature. Worst case condition with no RF applied, 100%of DC
power is dissipated.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
3






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