ME4946 D-S MOSFET Datasheet

ME4946 Datasheet, PDF, Equivalent


Part Number

ME4946

Description

Dual N-Channel 60-V (D-S) MOSFET

Manufacture

Matsuki

Total Page 5 Pages
Datasheet
Download ME4946 Datasheet


ME4946
www.DataSheet.co.kr
Dual N-Channel 60-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4946 is the Dual N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
ME4946
FEATURES
RDS(ON)41m@VGS=10V
RDS(ON)52m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management
DC/DC Converter
LCD TV & Monitor Display inverter
CCFL inverter
PIN CONFIGURATION
(SOP-8)
Top View
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25
Current(Tj=150)
TA=70
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
L=0.1mH
Maximum Power Dissipation
TA=25
TA=70
Operating Junction & Storage Temperature Range
Thermal Resistance-Junction to Ambient *
Thermal Resistance-Junction to Case *
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
PD
TJ
RθJA
RθJC
10 secs Steady State
60
±20
6.4 5
5.1 4
30
2
15
12
2.7 1.6
1.7 1
-55 to 150
46 76
43
Unit
V
A
mJ
W
℃/W
July, 2008-Ver4.1
01Datasheet pdf - http://www.DataSheet4U.net/

ME4946
www.DataSheet.co.kr
Dual N-Channel 60-V (D-S) MOSFET
ME4946
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Conditions
Min Typ Max Unit
STATIC
VDS
VGS(th)
IGSS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
IDSS Zero Gate Voltage Drain Current
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=60V, VGS=0V
VDS=60V, VGS=0V
TJ=55
60 V
1.0 1.8 3.0
V
±100 nA
1
μA
10
RDS(ON)
VSD
Drain-Source On-Resistancea
Diode Forward Voltage
VGS=10V, ID= 5.3A
VGS=4.5V, ID= 4.7A
IS=2A
33 41
mΩ
40 52
0.8 1.2
V
DYNAMIC
Ciss Input capacitance
940 1100
Coss
Output Capacitance
VDS=30V, VGS=0V, f=1.0MHz
71
pF
Crss
Reverse Transfer Capacitance
33
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS=30V, VGS=10V, ID=5.3A
VDS=30V, VGS=5V, ID=5.3A
22
13.3
7.1
29
18
nC
Qgd Gate-Drain Charge
7.5
Rg Gate Resistance
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Notes: a. Pulse test; pulse width 300us, duty cycle2%
f=1MHz
VDD=30V, RL =6.8Ω
ID=4.4A, VGEN=10V
RG=1Ω
VDD=30V, RL =6.8Ω
ID=4.4A, VGEN=4.5V
RG=1Ω
0.9 Ω
14 18
26 33
41 52
3.6 6
ns
12 16
26 33
42 52
3.8 7
July, 2008-Ver4.1
02Datasheet pdf - http://www.DataSheet4U.net/


Features www.DataSheet.co.kr ME4946 Dual N-Chann el 60-V (D-S) MOSFET GENERAL DESCRIPTIO N The ME4946 is the Dual N-Channel logi c enhancement mode power field effect t ransistors are produced using high cell density, DMOS trench technology. This high density process is especially tail ored to minimize on-state resistance. T hese devices are particularly suited fo r low voltage application such as cellu lar phone and notebook computer power m anagement and other battery powered cir cuits where high-side switching and low in-line power loss are needed in a ver y small outline surface mount package. FEATURES ● RDS(ON)≦41mΩ@VGS=10V ● RDS(ON)≦52mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resista nce and maximum DC current capability APPLICATIONS ● Power Management ● D C/DC Converter ● LCD TV & Monitor Dis play inverter ● CCFL inverter PIN C ONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-So.
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