Schottky Rectifier. VB40100C Datasheet

VB40100C Rectifier. Datasheet pdf. Equivalent

VB40100C Datasheet
Recommendation VB40100C Datasheet
Part VB40100C
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Feature VB40100C; New Product V40100C, VF40100C, VB40100C & VI40100C www.DataSheet4U.com Vishay General Semiconductor.
Manufacture Vishay Siliconix
Datasheet
Download VB40100C Datasheet




Vishay Siliconix VB40100C
New Product
V40100C, VF40100C, VB40100C & VI40100C
Vishay Generawl wSwe.DmataicShoenetd4Uu.ccotmor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V40100C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF40100C
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VB40100C
PIN 1
K
PIN 2
HEATSINK
VI40100C
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
2 x 20 A
100 V
250 A
0.61 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V40100C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(Fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
VAC
Operating junction and storage temperature range
TJ, TSTG
VF40100C VB40100C
100
40
20
250
1500
- 40 to + 150
VI40100C
UNIT
V
A
A
V
°C
Document Number: 89042 For technical questions within your region, please contact one of the following:
Revision: 26-May-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1



Vishay Siliconix VB40100C
New Product
V40100C, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage (2)
IR = 1.0 mA
100
(minimum)
IR = 10 mA
TA = 25 °C
VBR
105
(minimum)
Instantaneous forward voltage per diode (1)
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
Reverse current at rated VR per diode (2)
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF
IR
0.47
0.54
0.67
0.38
0.45
0.61
9
10
-
21
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
-
0.73
-
-
0.67
-
-
1000
45
UNIT
V
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40100C
VF40100C VB40100C
Typical thermal resistance per diode
RθJC
2.0
4.0
2.0
VI40100C
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V40100C-E3/4W
1.85
ITO-220AB
VF40100C-E3/4W
1.75
TO-263AB
VB40100C-E3/4W
1.39
TO-263AB
VB40100C-E3/8W
1.39
TO-262AA
VI40100C-E3/4W
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
50
VI40100C
40 VB40100C
V40100C
30 VF40100C
20
10
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
18
16
D = 0.8
14 D = 0.5
D = 0.3
12
10 D = 0.2
8 D = 0.1
6
D = 1.0
T
4
2
D = tp/T
tp
0
0 5 10 15 20 25
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89042
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 26-May-08



Vishay Siliconix VB40100C
New Product
V40100C, VF40100C, VB40100C & VI40100C
Vishay Generawl wSwe.DmataicShoenetd4Uu.ccotmor
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8
Instantaneous Forward Voltage (V)
1
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
TA = 150 °C
10 TA = 125 °C
1
0.1
0.01
TA = 100 °C
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
10 000
10
Junction to Case
1
0.1
0.01
V(B,I)40100C
0.1 1 10
t - Pulse Duration (s)
100
Figure 6. Typical Transient Thermal Impedance Per Diode
100
Junction to Case
10
1
0.1
0.01
VF40100C
0.1 1 10
t - Pulse Duration (s)
100
Figure 7. Typical Transient Thermal Impedance Per Diode
1000
100
0.1
1 10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance Per Diode
Document Number: 89042 For technical questions within your region, please contact one of the following:
Revision: 26-May-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3







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