HD1750JL

www.DataSheet4U.com HD1750JL Very high voltage NPN power transistor for high definition and slim CRT display PRELIMINARY DATA Features ■ ■ ■ ■ State-of-the-art technology: diffused collector “enhanced generation“ EHVS1 Wider range of optimum drive conditions Less sensitive to operating temperature variation In compliance with the 2002/93/EC European directive TO-264 2 3 1 Description The HD1750JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Stricture 1 (E.H.V.S.1) developed to fit High-Definition CRT display. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Internal schematic diagram Applications ■ High-definition and slim CRT TV and monitors Order code Part number HD1750JL Marking HD1750JL Package TO-264 Packaging Tube February 2007 Rev 3 1/10 www.st.com 10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings www.DataSheet4U.com HD1750JL 1 Electrical ratings Table 1. Symbol VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Absolute maximum ratings Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitte-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperatur...