HEXFET Power MOSFET
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PD - 94927A
Applications
l l
IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF
HEXFET® Po...
Description
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PD - 94927A
Applications
l l
IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF
HEXFET® Power MOSFET
High frequency DC-DC converters Lead-Free
VDSS RDS(on) max
150V 0.045:
ID
41A
Benefits
l l
l
Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current
TO-220AB TO-220 FullPak D2Pak TO-262 IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C IDM PD @TA = 25°C PD @TC = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
Max.
41 29 164 3.1 200 48 1.3 0.32 ± 30 2.7 -55 to + 175
Units
A W
c
Power Dissipation, D Pak Power Dissipation, TO-220 Power Dissipation, Fullpak Linear Derating Factor, TO-220 Linear Derating Factor, Fullpak
2
W/°C V V/ns °C
VGS dv/dt TJ TSTG
Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and
e
Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 1.1(10)
Nm (lbfin)
Thermal Resistance
Parameter
RθJC RθJC Rθcs RθJA RθJA RθJA Junction-to-Case Junction-to-Case, Fullpak Case-to-Sink, Flat, Greased Surface
Typ.
––– ––– 0.50 ––– ––– –––
Max.
0.75 3.14 ––– 62 40 65
Units
°C/W
h Junction-to-Ambient, D Pak i
Junction-to-Ambient, TO-220
2
h
Junction-to-Ambient, Fullpak
...
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