IRFIB41N15DPbF

www.DataSheet4U.com PD - 94927A Applications l l IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET® Power MOSFET High frequency DC-DC converters Lead-Free VDSS RDS(on) max 150V 0.045: ID 41A Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current TO-220AB TO-220 FullPak D2Pak TO-262 IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Absolute Maximum Ratings Parameter ID @ TC = 25°C IDM PD @TA = 25°C PD @TC = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Max. 41 29 164 3.1 200 48 1.3 0.32 ± 30 2.7 -55 to + 175 Units A W c Power Dissipation, D Pak Power Dissipation, TO-220 Power Dissipation, Fullpak Linear Derating Factor, TO-220 Linear Derating Factor, Fullpak 2 W/°C V V/ns °C VGS dv/dt TJ TSTG Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and e Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 1.1(10) Nm (lbfin) Thermal Resistance Parameter RθJC RθJC Rθcs RθJA RθJA RθJA Junction-to-Case Junction-to-Case, Fullpak Case-to-Sink, Flat, Greased Surface Typ. ––– ––– 0.50 ––– ––– ––– Max. 0.75 3.14 ––– 62 40 65 Units °C/W h Junction-to-Ambient, D Pak i Junction-to-Ambient, TO-220 2 h Junction-to-Ambient, Fullpak ...