SIE800DF

SiE800DF New Product www.DataSheet4U.com Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY ID (A)a VDS (V) 30 rDS(on) (Ω) 0.0072 at VGS = 10 V 0.0115 at VGS = 4.5 V Silicon Limit 90 73 Package Qg (Typ) Limit 50 12 nC 50 FEATURES Extremely Low Qgd WFET Technology for Low Switching Losses RoHS TrenchFET® Power MOSFET COMPLIANT Ultra Low Thermal Resistance Using ® Top-Exposed PolarPAK Package for Double-Sided Cooling Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size Low Qgd/Qgs Ratio Helps Prevent Shoot-Through 100 % Rg and UIS Tested Package Drawing PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS VRM DC/DC Conversion: High-Side Synchronous Rectification D D S G D D D 1 G 2 S 3 S 4 D 5 5 4 3 2 1 G Top View Top surface is connected to pins 1, 5, 6, and 10 Bottom View S N-Channel MOSFET For Related Documents Ordering Information: SiE800DF-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH ID Symbol VDS VGS Limit 30 ± 20 90 (Silicon Limit) 50a (Package Limit) 50a 20.6b, c 16.5b, c 60 50a 4.3b, c 40 80 104 66 5.2b, c 3.3b, c - 50 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS mJ TC =...