DatasheetsPDF.com

D-S MOSFET. ME4542 Datasheet

DatasheetsPDF.com

D-S MOSFET. ME4542 Datasheet






ME4542 MOSFET. Datasheet pdf. Equivalent




ME4542 MOSFET. Datasheet pdf. Equivalent





Part

ME4542

Description

N- and P-Channel 30-V (D-S) MOSFET



Feature


www.DataSheet4U.com ME4542 N- and P-Ch annel 30-V (D-S) MOSFET GENERAL DESCRIP TION The ME4542 is the N- and P-Channel logic enhancement mode power field eff ect transistors are produced using high cell density , DMOS trench technology. This high density process is especiall y tailored to minimize on-state resista nce. These devices are particularly sui ted for low voltag.
Manufacture

Matsuki

Datasheet
Download ME4542 Datasheet


Matsuki ME4542

ME4542; e application such as cellular phone and notebook computer power management and other battery powered circuits where h igh-side switching, and low in-line pow er loss are needed in a very small outl ine surface mount package. FEATURES ◠ 30V/6.9A,RDS(ON)=25mΩ@VGS=10V (N-Ch ) ● 30V/5.8A,RDS(ON)=40mΩ@VGS=4.5V (N-Ch) ● -30V/-6.1A,RDS(ON)=35mΩ@VG S=-10V (P-Ch) ● -30V/-5.1A, RD.


Matsuki ME4542

S(ON)=58mΩ@ VGS=-4.5V (P-Ch) ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resista nce and maximum DC current capability APPLICATIONS ● Power Management in No te book ● Portable Equipment ● Batt ery Powered System ● DC/DC Converter ● Load Switch ● DSC PIN CONFIGURA TION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise No.


Matsuki ME4542

ted) Parameter Drain-Source Voltage Gate -Source Voltage Continuous Drain Curren t(tJ=150℃) Pulsed Drain Current Conti nuous Source Current (Diode Conduction) Avalanche Energy with Single Pulse Max imum Power Dissipation Operating Juncti on Temperature Thermal Resistance-Junct ion to Ambient* Thermal Resistance-Junc tion to Case *The device mounted on 1in 2 FR4 board with 2 o.

Part

ME4542

Description

N- and P-Channel 30-V (D-S) MOSFET



Feature


www.DataSheet4U.com ME4542 N- and P-Ch annel 30-V (D-S) MOSFET GENERAL DESCRIP TION The ME4542 is the N- and P-Channel logic enhancement mode power field eff ect transistors are produced using high cell density , DMOS trench technology. This high density process is especiall y tailored to minimize on-state resista nce. These devices are particularly sui ted for low voltag.
Manufacture

Matsuki

Datasheet
Download ME4542 Datasheet




 ME4542
N- and P-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4542 is the N- and P-Channel logic enhancement mode
power field effect transistors are produced using high cell density ,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery
powered circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4542www.DataSheet4U.com
FEATURES
● 30V/6.9A,RDS(ON)=25mΩ@VGS=10V (N-Ch)
● 30V/5.8A,RDS(ON)=40mΩ@VGS=4.5V (N-Ch)
● -30V/-6.1A,RDS(ON)=35mΩ@VGS=-10V (P-Ch)
● -30V/-5.1A, RDS(ON)=58mΩ@ VGS=-4.5V (P-Ch)
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25℃
Current(tJ=150℃)
TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Energy with Single Pulse
Maximum Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
IS
EAS
PD
TJ
RθJA
RθJC
N-Channel P-Channel
30 -30
±20 ±20
6.9 -6.1
5.5 -4.9
30 -30
1.7 -1.7
10 20
2.0
1.3
-55 to 150
Steady 75 Steady 65
10sec 47 10sec 35
44 30
Mar, 2007-Ver3.1
Unit
V
V
A
A
A
mJ
W
℃
℃/W
℃/W
01




 ME4542
N- and P-Channel 30-V (D-S) MOSFET
ME4542www.DataSheet4U.com
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
Symbol Parameter
STATIC
VGS(th)
Gate Threshold Voltage
Limit
VDS=VGS, ID=250μA
VDS=VGS, ID=-250μA
Min Typ Max Unit
N-Ch 1.0 1.5
P-Ch -1.0 -1.5
3.0
-3.0
V
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
IDSS Zero Gate Voltage Drain Current
ID(ON)
On-State Drain Current
RDS(ON) Drain-Source On-State Resistance
VSD Diode Forward Voltage
DYNAMIC
VDS=30V, VGS=0V
VDS=-30V, VGS=0V
VDS=30V, VGS=0V,TJ=55℃
VDS=-30V, VGS=0V,TJ=55℃
VDS≧5V, VGS= 10V
VDS≦-5V, VGS= -10V
VGS=10V, ID= 6.9A
VGS=-10V, ID= -6.1A
VGS=4.5V, ID= 5.8A
VGS=-4.5V, ID= -5.1A
IS=1.7A, VGS=0V
IS=-1.7A, VGS=0V
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
N-Channel
VDS=15V, VGS=10V, ID=6.9A
P-Channel
VDS=-15V, VGS=-10V, ID=-6.1A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Channel
VDS=15V, VGS=0V, f=1MHz
P-Channel
VDS=15V, VGS=0V, f=1MHz
Rg
td(on)
tr
td(off)
tf
Gate Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=0V, VGS=0V, f=1MHz
N-Channel
VDD=15V, RL =15Ω
ID=1A, VGEN=10V, RG=6Ω
P-Channel
VDD=-15V, RL =15Ω
ID=-1A, VGEN=-10V,RG=6Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
-20
21
30
32
48
0.8
-0.8
12
21
2
4
2.5
6
360
840
70
120
17
32
0.5
6
9.3
32
14
13
32
58
3.2
6.8
±100
±100
1
-1
25
-25
nA
μA
A
25
35
mΩ
40
58
1.2
-1.2
V
15
25
nC
420
980
pF
Ω
13
41
18
17
ns
41
75
5
9
Mar, 2007-Ver3.1
02




 ME4542
N- and P-Channel 30-V (D-S) MOSFET
Typical Characteristics (TJ =25℃ Noted) N-CHANNEL
ME4542www.DataSheet4U.com
Mar, 2007-Ver3.1
03



Recommended third-party ME4542 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)