P-Channel MOSFET
NTA4151P, NTE4151P
MOSFET – Single, P-Channel, Small Signal, Gate Zener, SC-75, SC-89
-20 V, -760 mA
Features
• Low RD...
Description
NTA4151P, NTE4151P
MOSFET – Single, P-Channel, Small Signal, Gate Zener, SC-75, SC-89
-20 V, -760 mA
Features
Low RDS(on) for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package ESD Protected Gate These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
High Side Load Switch DC−DC Conversion Small Drive Circuits Battery Operated Systems such as Cell Phones, PDAs, Digital
Cameras, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Steady State
VDSS VGS ID
−20
V
±6.0
V
−760 mA
Power Dissipation (Note 1)
PD
SC−75 Steady State
SC−89
mW 301 313
Pulsed Drain Current
tp =10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8 in from case for 10 s)
IDM TJ, TSTG IS TL
±1000 mA
−55 to °C
150
−250 mA
260
°C
Gate−to−Source ESD Rating −
ESD 1800 V
(Human Body Model, Method 3015)
THERMAL RESISTANCE RATINGS
Junction−to−Ambient − Steady State (Note 1) SC−75 SC−89
RqJA
°C/W 415 400
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 ...
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