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Signal MOSFET. NTA4151P Datasheet

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Signal MOSFET. NTA4151P Datasheet






NTA4151P MOSFET. Datasheet pdf. Equivalent




NTA4151P MOSFET. Datasheet pdf. Equivalent





Part

NTA4151P

Description

Small Signal MOSFET



Feature


NTA4151P Small Signal MOSFET −20 V, 540 mA, Single P−Channel, Gate Zener , SC−75 Features www.DataSheet4U.com • • • • • • • • • Low RDS(on) for Higher Efficiency and L onger Battery Life Small Outline Packag e (1.6 x 1.6 mm) SC−75 Standard Gullw ing Package ESD Protected Gate Pb−Fre e Package is Available* http://onsemi. com V(BR)DSS RDS(on) TYP 0.26 W @ −4.5 V −20 V 0.
Manufacture

On Semiconductor

Datasheet
Download NTA4151P Datasheet


On Semiconductor NTA4151P

NTA4151P; .35 W @ −2.5 V 0.49 W @ −1.8 V P−C hannel MOSFET D −540 mA ID MAX Appli cations High Side Load Switch DC−DC Conversion Small Drive Circuits Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc. MAXIMUM RA TINGS (TJ = 25°C unless otherwise stat ed) Parameter Drain−to−Source Volta ge Gate−to−Source Voltage Continuou s Drain Current (Note 1) Power Dissip.


On Semiconductor NTA4151P

ation (Note 1) Pulsed Drain Current Stea dy State Steady State tp =10 ms Symbol VDSS VGS ID PD IDM TJ, TSTG IS TL Value −20 ±6.0 −540 150 ±1000 −55 to 150 −250 260 Units V S V mA mW mA 3 G MARKING DIAGRAM & PIN ASSIGNMENT 3 Drain 2 1 Operating Junction and Stora ge Temperature Continuous Source Curren t (Body Diode) Lead Temperature for Sol dering Purposes (1/8” from c.


On Semiconductor NTA4151P

ase for 10 s) °C mA °C SC−75 / SOT −416 CASE 463 STYLE 5 TN D 1 Gate 2 Source THERMAL RESISTANCE RATINGS Ju nction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − t ≤ 5 s (Note 1) RqJA RqJA 833 715 °C/ W TN = Specific Device Code D = Date C ode Maximum ratings are those values b eyond which device damage can occur. Ma ximum ratings applied to the device are.

Part

NTA4151P

Description

Small Signal MOSFET



Feature


NTA4151P Small Signal MOSFET −20 V, 540 mA, Single P−Channel, Gate Zener , SC−75 Features www.DataSheet4U.com • • • • • • • • • Low RDS(on) for Higher Efficiency and L onger Battery Life Small Outline Packag e (1.6 x 1.6 mm) SC−75 Standard Gullw ing Package ESD Protected Gate Pb−Fre e Package is Available* http://onsemi. com V(BR)DSS RDS(on) TYP 0.26 W @ −4.5 V −20 V 0.
Manufacture

On Semiconductor

Datasheet
Download NTA4151P Datasheet




 NTA4151P
NTA4151P
www.DataSheet4U.com
Small Signal MOSFET
−20 V, −540 mA, Single P−Channel,
Gate Zener, SC−75
Features
Low RDS(on) for Higher Efficiency and Longer Battery Life
Small Outline Package (1.6 x 1.6 mm)
SC−75 Standard Gullwing Package
ESD Protected Gate
Pb−Free Package is Available*
Applications
High Side Load Switch
DC−DC Conversion
Small Drive Circuits
Battery Operated Systems such as Cell Phones, PDAs, Digital
Cameras, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
(Note 1)
Steady State
VDSS
VGS
ID
−20
±6.0
−540
V
V
mA
Power Dissipation (Note 1)
Steady State
Pulsed Drain Current
tp =10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
PD
IDM
TJ,
TSTG
IS
TL
150
±1000
−55 to
150
−250
260
mW
mA
°C
mA
°C
THERMAL RESISTANCE RATINGS
Junction−to−Ambient − Steady State (Note 1) RqJA
833 °C/W
Junction−to−Ambient − t 5 s (Note 1)
RqJA
715
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 0
1
http://onsemi.com
V(BR)DSS
−20 V
RDS(on) TYP
0.26 W @ −4.5 V
0.35 W @ −2.5 V
0.49 W @ −1.8 V
ID MAX
−540 mA
P−Channel MOSFET
D
G
S
MARKING DIAGRAM &
PIN ASSIGNMENT
33
Drain
2
1
SC−75 / SOT−416
CASE 463
STYLE 5
TN D
12
Gate Source
TN = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping
NTA4151PT1
SC−75 3000/Tape & Reel
NTA4151PT1G
SC−75
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTA4151P/D




 NTA4151P
NTA4151P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
V(BR)DSS
IDSS
IGSS
VGS = 0 V, ID = −250 mA
VGS = 0 V, VDS = −16 V
VDS = 0 V, VGS = ±4.5 V
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
RDS(on)
gFS
VDS = VGS, ID = −250 mA
VGS = −4.5 V, ID = −350 mA
VGS = −2.5 V, ID = −300 mA
VGS = −1.8 V, ID = −150 mA
VDS = −10 V, ID = −250 mA
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = −5.0 V
VGS = −4.5 V, VDD = −10 V,
ID = −0.3 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = −4.5 V, VDD = −10 V,
ID = −200 mA, RG = 10 W
Forward Diode Voltage
VSD VGS = 0 V, IS = −250 mA
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
−20
−0.45
www.DataSheet4U.com
Typ Max Unit
−1.0
$1.0
−100
$10
V
nA
mA
V
0.26 0.36 W
0.35 0.45
0.49 1.0
0.4 S
156
28
18
2.1
0.125
0.325
0.5
pF
nC
8.0 ns
8.2
29
20.4
−0.72 −1.1 V
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2




 NTA4151P
NTA4151P
TYPICAL ELECTRICAL CHARACTERISTICS
www.DataSheet4U.com
0.7
0.6
−1.5 V
TJ = 25°C
0.5
VGS = −1.75 V to −4.5 V
0.4
0.3 −1.25 V
0.2
0.1 −1.0 V
0
0
0.5 1.0
1.5 2.0
2.5 3.0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.6
VDS w −10 V
0.5
0.4
0.3
0.2
0.1
0
0
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.4 0.8 1.2 1.6
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.0
0.6
VGS = −4.5 V
0.5
0.4 TJ = 125°C
0.3 TJ = 25°C
0.2 TJ = −55°C
0.1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.6
ID = − 0.35 A
VGS = −4.5 V
1.4
1.2
0.6
VGS = −2.5 V
0.5
0.4
0.3
0.2
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Temperature
250
TJ = 25°C
200
CISS
150
1.0 100
0.8
0.6
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
50 COSS
CRSS
0
0
4
8 12 16
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
20
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3



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