High Performance NPN Bipolar RF Transistor
• High performance low noise amplifier • Low minimum noise figure of typ. 0.8...
High Performance
NPN Bipolar RF
Transistor
High performance low noise amplifier Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz For a wide range of non automotive applications
such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE and ISM bands Easy to use standard package with visible leads Pb-free (RoHS compliant) package
3 4
BF776
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BF776
Marking
Pin Configuration
R3s 1=B 2=E 3=C 4=E -
-
Package SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage
Collector current Base current Total power dissipation1) TS ≤ 90°C Junction temperature Ambient temperature
Storage temperature
VCEO
VCES VCBO VEBO IC IB Ptot
TJ TA TStg
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
1TS is measured on the emitter lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance
Value
4.0 3.5 13 13 1.2 50 3 200
150 -55 ... 150 -55 ... 150
Value ≤ 300
Unit V
mA mW °C
Unit K/W
2010-04-06 1
BF776
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 5 V, VBE = 0 Collector-bas...