SPECIFICATION
MODEL : HED57XXU12
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Low Power Hall-Effect Switch
DRAWN BY
CHECKED BY
APPROVED BY
S...
SPECIFICATION
MODEL : HED57XXU12
www.DataSheet4U.com
Low Power Hall-Effect Switch
DRAWN BY
CHECKED BY
APPROVED BY
S.W. PARK 2006.9.19
S.W. KIM 2006.9.19
H.C. JOUNG 2006.9.19
SAMSUNG ELECTRO-MECHANICS CO.,LTD. 314,Maetan 3-Dong,Yeongtong-Gu,Suwon, Kyunggi-Do,KOREA,443-743
HED57XXU12(060919) Rev.0 Page 1/17
Revision history (Model : HED57XXU12)
Date
2006.9.19
Rev. No
0
Contents revised
Establishment
Design
S.W.Park
Approval
H.C.Joung
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HED57XXU12(060919) Rev.0 Page 2/17
1. Description
The HED57XXU12 Omnipolar Hall effect sensor IC is fabricated on mixed signal CMOS technology. It incorporates advanced dynamic offset cancellation techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a sleep mode. Periodically the device is awakened by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is above or below the BOP/BRP thresholds then the output
transistor is driven to change states accordingly. While in the sleep cycle the output
transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems.
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The output
transistor ...