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HP50

SHANTOU HUASHAN ELECTRONIC DEVICES

NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N TRANSISTOR HP50 ¨€ APPLICATIONS High Voltage And switchi...


SHANTOU HUASHAN ELECTRONIC DEVICES

HP50

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Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N TRANSISTOR HP50 ¨€ APPLICATIONS High Voltage And switching. ¨€ ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£© T stg ¡ª¡ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡- 65~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ PC¡ª¡ªCollector Dissipation£¨ T c=25¡æ £©¡-¡-¡-¡-¡-¡-¡-¡40W www.DataSheet4U.com TO-220 VCBO ¡ª¡ª Collector-Base Voltage¡-¡-¡-¡-¡-¡-¡¡-¡-¡500V VCEO¡ª¡ª Collector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡400V VEBO ¡ª¡ª Emitter-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡5V IC¡ª¡ªCollector Current £¨ DC£ © ¡-¡-¡-¡-¡¡¡-¡-¡-¡-¡-¡-¡1A IC¡ª¡ªCollector Current£¨ Pulse£©¡-¡-¡-¡-¡-¡-¡¡¡-¡-¡-¡2A IB¡ª¡ª Base Current¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡0.6A 1¨D Base£¬ B 2¨D Collector£¬ C 3¨D Emitter, E ¨€ ELECTRICAL CHARACTERISTICS£¨ Ta=25¡æ£© Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO ICEO IEBO ICES HFE£¨ 2£© HFE VCE(sat) VBE(on) fT R¦È JC R¦È JA Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter-Base Cutoff Current 400 1 1 V IC=30mA, IB=0 mA VCE=300V, IB=0 m A VEB=5V, IC=0 mA VCE=500V, VEB=0 VCE=10V, IC=0.3A VCE=10V, IC=1A VCE=10V, IC=0.2A,f=1MHz IC=1A, IB =0.2A VCE=10V, IC=1A Collector Cut-off Current 22 10 20 Collector- Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product 10 1 150 HFE£¨ 1£© DC Current Gain 1 1.5 3.125 62.5 V V MHz VCE=10V,IC=0.1A,f=2MHz ¡æ /W ¡æ /W Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N TRANSISTOR HP50 www.Da...




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