Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N TRANSISTOR
HP50
¨€ APPLICATIONS
High Voltage And switchi...
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N
TRANSISTOR
HP50
¨€ APPLICATIONS
High Voltage And switching. ¨€ ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£©
T stg ¡ª¡ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡- 65~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ PC¡ª¡ªCollector Dissipation£¨ T c=25¡æ £©¡-¡-¡-¡-¡-¡-¡-¡40W
www.DataSheet4U.com
TO-220
VCBO ¡ª¡ª Collector-Base Voltage¡-¡-¡-¡-¡-¡-¡¡-¡-¡500V VCEO¡ª¡ª Collector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡400V VEBO ¡ª¡ª Emitter-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡5V IC¡ª¡ªCollector Current £¨ DC£ © ¡-¡-¡-¡-¡¡¡-¡-¡-¡-¡-¡-¡1A IC¡ª¡ªCollector Current£¨ Pulse£©¡-¡-¡-¡-¡-¡-¡¡¡-¡-¡-¡2A IB¡ª¡ª Base Current¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡0.6A
1¨D Base£¬ B
2¨D Collector£¬ C 3¨D Emitter, E
¨€ ELECTRICAL CHARACTERISTICS£¨ Ta=25¡æ£©
Symbol Characteristics Min Typ Max Unit Test Conditions
BVCEO ICEO IEBO ICES HFE£¨ 2£© HFE VCE(sat) VBE(on) fT R¦È JC R¦È JA
Collector-Emitter Breakdown Voltage Collector Cut-off Current
Emitter-Base Cutoff Current
400 1
1
V
IC=30mA, IB=0
mA VCE=300V, IB=0 m A VEB=5V, IC=0 mA VCE=500V, VEB=0 VCE=10V, IC=0.3A VCE=10V, IC=1A VCE=10V, IC=0.2A,f=1MHz IC=1A, IB =0.2A VCE=10V, IC=1A
Collector Cut-off Current 22 10 20 Collector- Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product 10
1 150
HFE£¨ 1£© DC Current Gain
1 1.5 3.125 62.5
V V
MHz VCE=10V,IC=0.1A,f=2MHz ¡æ /W ¡æ /W
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N
TRANSISTOR
HP50
www.Da...