SEMIX302GB128DS

SEMiX302GB128Ds Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V VGES tpsc Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 283 201 150 300 -20 ... 20 10 -40 ... 150 Tc = 25 °C Tc = 80 °C 231 159 150 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 300 1300 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX®2s SPT IGBT Modules SEMiX302GB128Ds Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data www.DataSheet4U.com Features Homogeneous Si SPT = Soft-Punch-Through technology VCE(sat) with positive temperature coefficient High short circuit capability UL recognised file no. E63532 Tj = 150 °C Typical Applications AC inverter drives UPS Electronic welders up to 20 kHz Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) per IGBT per IGBT IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 150 A Tj = 125 °C RG on = 4 Ω RG off = 4 Ω Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 13.8 0.92 0.58 1420 2.50 190 51 17 466 56 16 0.11 Tj = 25 °C Tj = 125 °C 4.5 1.9 2.10 1 0.9 6.0 8.0 5 0.1 2.3 2.55 1.15 1.05 7.7 10.0 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns ...