IGBT
SEMiX302GB128Ds
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °...
Description
SEMiX302GB128Ds
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V VGES tpsc Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 283 201 150 300 -20 ... 20 10 -40 ... 150 Tc = 25 °C Tc = 80 °C 231 159 150 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 300 1300 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V
Conditions
Values
Unit
SEMiX®2s
SPT IGBT Modules
SEMiX302GB128Ds
Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol
Preliminary Data www.DataSheet4U.com Features
Homogeneous Si SPT = Soft-Punch-Through technology VCE(sat) with positive temperature coefficient High short circuit capability UL recognised file no. E63532
Tj = 150 °C
Typical Applications
AC inverter drives UPS Electronic welders up to 20 kHz
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) per IGBT per IGBT IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 150 A Tj = 125 °C RG on = 4 Ω RG off = 4 Ω Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 13.8 0.92 0.58 1420 2.50 190 51 17 466 56 16 0.11 Tj = 25 °C Tj = 125 °C 4.5 1.9 2.10 1 0.9 6.0 8.0 5 0.1 2.3 2.55 1.15 1.05 7.7 10.0 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns ...
Similar Datasheet
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