SEMIX303GD12E4C

SEMiX303GD12E4c SEMiX® 33c Trench IGBT Modules SEMiX303GD12E4c Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability UL recognized, file no. E63532 Typical Applications* AC inverter drives UPS Electronic Welding Remarks Case temperature limited to TC=125°C max. Product reliability results are valid for Tj=150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Tterminal = 80 °C Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel Tj = 25 °C Tj = 150 °C VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 11.4 mA VGE = 0 V VCE = 1200 V Tj = 25 °C Tj = 150 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 300 A VGE = ±15 V RG on = 1.8  RG off = 1.8  Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dton = 4840 A/µs Tj = 150 °C di/dtoff = 2980 A/µs Tj = 150 °C Rth(j-c) per IGBT Values 1200 466 359 300 900 -20 ... 20 10 -40 ... 175 338 252...