IGBT
SEMiX352GAL128Ds
SEMiX®2s
SPT IGBT Modules
SEMiX352GAL128Ds
wwPwr.eDlaimtainShaerey tD4Ua.ctaom Features
• Homogeneous ...
Description
SEMiX352GAL128Ds
SEMiX®2s
SPT IGBT Modules
SEMiX352GAL128Ds
wwPwr.eDlaimtainShaerey tD4Ua.ctaom Features
Homogeneous Si SPT = Soft-Punch-Through technology VCE(sat) with positive temperature
coefficient High short circuit capability UL recognised file no. E63532
Typical Applications
AC inverter drives UPS Electronic welders up to 20 kHz
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
IFnom IFRM IFSM Tj
IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C
Freewheeling diode
IF
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
IFnom IFRM IFSM Tj
IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS) Tstg Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint
IC = 200 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C Tj = 125 °C
VGE=VCE, IC = 8 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 125 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
1200 377 268 200 400 -20 ... 20
10
-40 ... 150
297 204 200 400 2000 -40 ... 150
200 400 2000 -40 ... 150
600 -40 ... 125
4000
Unit
V A A A A V
µs
°C
A A A A A °C
A A A A A °C
A °C V
min.
typ.
max. Unit
1.9
2.35
V
2.10
2.55
V
1
1.15
V
0.9
1.05
V
4.5
6.0
m...
Similar Datasheet
- SEMIX352GAL128DS IGBT - Semikron International