SEMIX352GB128DS

SEMiX352GB128Ds Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V VGES tpsc Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 377 268 200 400 -20 ... 20 10 -40 ... 150 Tc = 25 °C Tc = 80 °C 297 204 200 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 400 2000 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX®2s SPT IGBT Modules SEMiX352GB128Ds Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data www.DataSheet4U.com Features Homogeneous Si SPT = Soft-Punch-Through technology VCE(sat) with positive temperature coefficient High short circuit capability UL recognised file no. E63532 Tj = 150 °C Typical Applications AC inverter drives UPS Electronic welders up to 20 kHz Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V VGE=VCE, IC = 8 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 200 A Tj = 125 °C RG on = 3 Ω RG off = 3 Ω Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 18.9 1.24 0.78 1920 2.00 230 55 20 585 90 21 0.083 Tj = 25 °C Tj = 125 °C 4.5 1.9 2.10 1 0.9 4.5 6.0 5 0.1 2.35 2.55 1.15 1.05 6.0 7.5 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W Condition...