SEMIX353GD126HDC

SEMiX353GD126HDc Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 125 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 364 256 225 450 -20 ... 20 10 -40 ... 150 329 228 225 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 1700 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 33c Trench IGBT Modules SEMiX353GD126HDc www.DataSheet4U.com Tj = 150 °C IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability UL recognised file no. E63532 Typical Applications* AC inverter drives UPS Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 225 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V VGE=VCE, IC = 9 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 225 A RG on = 2 Ω RG off = 2 Ω Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 16.0 0.84 0.73 1800 3.33 265 55 26.5 585 120 32.5 0.1 Tj = 25 °C Tj = 125 °C 5 1.7 2 1 0.9 3.1 4.9 5.8 0.1 2.1 2.45 1.2 1.1 4.0 6.0 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns...