KHB5D0N50F

SEMICONDUCTOR TECHNICAL DATA General Description KHB5D0N50P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB5D0N50P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V Qg(typ.) = 21nC 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + MAXIMUM RATING (Tc=25 www.DataSheet4U.com CHARACTERISTIC ) RATING SYMBOL KHB5D0N50F UNIT KHB5D0N50P KHB5D0N50F2 500 30 5.0 ID 2.9 IDP EAS EAR dv/dt 73 PD 0.74 Tj Tstg 150 -55 150 0.3 W/ 20 390 9.2 3.5 38 2.9* 20* mJ mJ V/ns W Q 1 2 3 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB KHB5D0N50F A F C Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 VDSS VGSS V V 5.0* A K E O DIM B MILLIMETERS L M J R D N N H A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 12.57 + 0.2 _ 0.1 0.5 + 13.0 MAX _ 0.1 3.23 ...