SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB5D0N50P/F/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB5D0N50P
A O ...
SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB5D0N50P/F/F2
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
KHB5D0N50P
A O C F E G B Q I K M L J D N N H P
DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O
1 2 3
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES
VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V Qg(typ.) = 21nC
15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 +
MAXIMUM RATING (Tc=25 www.DataSheet4U.com
CHARACTERISTIC
)
RATING SYMBOL KHB5D0N50F UNIT KHB5D0N50P KHB5D0N50F2 500 30 5.0 ID 2.9 IDP EAS EAR dv/dt 73 PD 0.74 Tj Tstg 150 -55 150 0.3 W/ 20 390 9.2 3.5 38 2.9* 20* mJ mJ V/ns W
Q 1 2 3
1. GATE 2. DRAIN 3. SOURCE
P Q
TO-220AB
KHB5D0N50F
A F C
Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25
VDSS VGSS
V V 5.0* A
K E
O
DIM
B
MILLIMETERS
L
M J
R
D N N
H
A B C D E F G H J K L M N O Q R
_ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 12.57 + 0.2 _ 0.1 0.5 + 13.0 MAX _ 0.1 3.23 ...