SIM200D06AV1

Preliminary SIM200D06AV1 VCES = 600V Ic= 200A VCE(ON) typ. = 1.8V @Ic= 200A “HALF-BRIDGE” IGBT Feature ▪ design technology ▪ Low VCE (sat) ▪ Low Turn-off losses ▪ Short tail current for over 20KHz Applications ▪ Motor controls ▪ VVVF inverters ▪ Inverter-type welding MC over 18KHZ ▪ SMPS, Electrolysis ▪ UPS/EPS, Robotics Package : V1 Absolute www.DataSheet4U.com Symbol VCES VGE IC ICP IF IFM tp Viso Weight Tj Tstg Md Maximum Ratings @ Tj=25 Parameter (Per Leg) Condition TC = Ratings 600 20 Unit V V A A A A Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short circuit test, VGE = 15V, VCC = 360V Isolation Voltage test Weight of Module Junction Temperature Storage Temperature Mounting torque with screw : M5 TC = 80 TC = TC = 80 TC = TC = 150 25 200 (290) 400 200 (290) 400 6 (8) 2500 190 -40 ~ 150 -40 ~ 125 2.0 AC @ 1 minute V g N.m Static Characteristics @ Tj = 25 Parameters VCE(ON) VGE(th) ICES IGES VF RGINT Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Forward voltage drop Integrated gate resistor (unless otherwise specified) Min Typ 1.80 5.8 Max 1.95 Unit V Test conditions IC = 200A, VGE = 15V VCE = VGE, IC = 4 VGE= 0V, VCE = 600V VCE = 0V, VGE = IF = 200A V 6.5 5.0 400 1.6 2 1.9 Preliminary Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25 Pa...