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IDT71V416VS

Integrated Device Technology

(IDT71V416VL/VS) 3.3V CMOS Static RAM

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Features 256K x 16 advanced high-speed CMOS Static RAM JEDEC Center Power / G...


Integrated Device Technology

IDT71V416VS

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Description
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Features 256K x 16 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise. ◆ Equal access and cycle times – Commercial and Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low power consumption via chip deselect www.DataSheet4U.com ◆ Upper and Lower Byte Enable Pins ◆ Single 3.3V power supply ◆ Available in 44-pin, 400 mil plastic SOJ package and a 44pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package. ◆ ◆ IDT71V416VS IDT71V416VL Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for highspeed memory needs. The IDT71V416 has an output enable pin which operates as fast as 5ns, with address access times as fast as 10ns. All bidirectional inputs and outputs of the IDT71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package. Functional Block Diagram Output Enable Buffer OE A0 - A17 Address Buffers Row / Co...




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