Mobile DDR SDRAM
K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two dat...
Description
K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM
1. FEATURES
VDD/VDDQ = 1.8V/1.8V Double-data-rate architecture; two data transfers per clock cycle Bidirectional data strobe(DQS) Four banks operation Differential clock inputs(CK and CK) MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) EMRS cycle with address key programs - Partial Array Self Refresh ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ) Internal Temperature Compensated Self Refresh All inputs except data & DM are sampled at the positive going edge of the system clock(CK). www.DataSheet4U.com Data I/O transactions on both edges of data strobe, DM for masking. Edge aligned data output, center aligned data input. No DLL; CK to DQS is not synchronized. LMD, UMD for write masking only. Auto refresh duty cycle - 7.8us for -25 to 85 °C
Mobile DDR SDRAM
2. Operating Frequency
DDR333 Speed @CL2 Speed @CL3
NOTE: 1) CAS Latency
1) 1)
DDR266 83Mhz 133Mhz
83Mhz 166Mhz
3. Address configuration
Organization 64Mx16
- DM is internally loaded to match DQ and DQS identically.
Bank Address BA0,BA1
Row Address A0 - A13
Column Address A0 - A9
4. Ordering Information
Part No. K4X1G163PC-L(F)E/GC6 K4X1G163PC-L(F)E/GC3 Max Freq. 166MHz(CL=3),83MHz(CL=2) 133MHz(CL=3),83MHz(CL=2) Interface LVCMOS Package 60FBGA Pb (Pb Free)
- L(F)E : 60FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 °C ~ 85 ...
Similar Datasheet