DatasheetsPDF.com
K4X56163PG-FG
16M x16 Mobile-DDR SDRAM
Description
K4X56163PG - L(F)E/G 16M x16 Mobile-DDR SDRAM FEATURES Mobile-DDR SDRAM 1.8V power supply, 1.8V I/O power Double-data-rate architecture; two data transfers per clock cycle Bidirectional data strobe(DQS) Four banks operation Differential clock inputs(CK and CK) MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, ...
Samsung semiconductor
Download K4X56163PG-FG Datasheet
Similar Datasheet
K4X56163PG-FE
16M x16 Mobile-DDR SDRAM
- Samsung semiconductor
K4X56163PG-FG
16M x16 Mobile-DDR SDRAM
- Samsung semiconductor
K4X56163PG-LE
16M x16 Mobile-DDR SDRAM
- Samsung semiconductor
K4X56163PG-LG
16M x16 Mobile-DDR SDRAM
- Samsung semiconductor
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
