APT94N65B2C3

650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction MOSFET T-MaxTM Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated Dual die (parallel) Popular T-MAX Package www.DataSheet4U.com Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. D G S MAXIMUM RATINGS Symbol Parameter VDSS ID IDM VGS PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 All Ratings per die: TC = 25°C unless otherwise specified. APT94N65B2C3S(G) 650 94 60 282 20 415 Volts Watts Amps UNIT Volts Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C TJ,TSTG Operating and Storage Junction Temperature Range TL dv/ dt IAR EAR EAS Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C) Avalanche Current 2 2 ( Id = 7A, Vdd = 50V ) ( Id = 3.5A, Vdd = 50V ) -55 to 150 260 50 7 1 1800 °C V/ns Amps mJ Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BV(DSS) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA) Drain-Source On-State Resistance 3 MIN 65...