D1703L

STD1703L N-CHANNEL 30V - 0.038Ω - 17A - DPAK STripFET™ II MOSFET TYPE VDSS RDS(on) STD1703L 30 V <0.05 Ω s TYPICAL RDS(on) = 0.038 Ω s APPLICATION ORIENTED CHARACTERIZATION ID 17 A 3 1 DPAK DESCRIPTION This MOSFET is the latest development of STMi- croelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC-DC CONVERTERS s LINEAR POST REGULATION ORDERING INFORMATION SALES TYPE MARKING STD1703LT4 D1703L PACKAGE DPAK April 2004 PACKAGING TAPE & REEL 1/10 STD1703L ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Max. Operating Junction Temperature (q) Pulse width limited by safe operating area (1) ISD ≤17A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (2) Starting Tj=25°C, ID=11A, VDD=15V THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl Maximum Lead Tempe...