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K3637

2SK3637

Description

Power MOSFETs 2SK3637 Silicon N-channel power MOSFET 15.5±0.5 Unit: mm φ 3.2±0.1 5˚ 3.0±0.3 5˚ For PDP/For high-speed switching (10.0) 26.5±0.5 (4.5) Low on-resistance, low Qg High avalanche resistance (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5˚ 5˚ ■ Absolute Maximum Ratings TC = 25°C Parameter www.DataSheet4U.com Drain-source sur...

Panasonic Semiconductor

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