AO4902

AO4902 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4902 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two identical MOSFETs are co-packaged in parallel with a Schottky diode, making them ideal for many bridge and totem pole applications, for e.g. DDR memory. Standard Product www.DataSheet4U.com AO4902 is Pb-free (meets ROHS & Sony 259 specifications). AO4902L is a Green Product ordering option. AO4902 and AO4902L are electrically identical. Features VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D1 D2 K1 K2 S2/A2 G2 S1/A1 G1 1 2 3 4 8 7 6 5 D2/K2 D2/K2 D1/K1 D1/K1 G1 S1 A1 G2 S2 A2 SOIC-8 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current B A MOSFET 30 ±12 6.9 5.8 40 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C TA=70°C TA=25°C IF IFM TA=70°C PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL Schottky reverse voltage Continuous Forward CurrentA Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient C A B 30 3 2 2 1.44 -55 to 150 Typ 48 74 35 47.5 71 32 40 2 1.44 -55 to 150 Max 62.5 110 40 62.5 110 40 V A ...