AO4904

AO4904 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4904 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4904 is Pb-free (meets ROHS & Sony 259 specifications). AO4904L is a Green Product www.DataSheet4U.com ordering option. AO4904 and AO4904L are electrically identical. S2 G2 S1/A G1 D2 D2 D1/K D1/K G1 S1 Features VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D1 K D2 1 2 3 4 8 7 6 5 SOIC-8 A G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current B A MOSFET 30 ±12 6.9 5.8 40 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current B TA=25°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET A t ≤ 10s Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-AmbientA Maximum Junction-to-Ambient C Maximum Junct...