AO4914

AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4914 uses advanced trench technology to provide Q1(N-Channel) excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the VDS= 30V ID= 8A (VGS=10V) RDS(ON) <20.5mΩ synchronous MOSFET to boost efficiency further. RDS(ON) <28mΩ Q2(N-Channel) 30V 8A (VGS=10V) RDS(ON) <20.5mΩ (VGS=10V) RDS(ON) <28mΩ (VGS=4.5V) ESD Protected 100% UIS Tested 100% Rg Tested ESD Protected 100% UIS Tested 100% Rg Tested SCHOTTKY VDS = 30V, IF = 3A, VF<0.5V@1A SOIC-8 Top View Bottom View S1/A G1 S2 G2 Top View D1/K D1/K D2 D2 G1 D1 K A S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR 8 6.5 40 19 18 8 6.5 40 19 18 TA=25°C Power Dissipation B TA=70°C 22 PD 1.3 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Parameter Reverse Voltage Continuous Forward TA=25°C Current TA=70°C Pulsed Diode Forward Current C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range Symbol VDS IF IFM PD TJ, TSTG Max Schottky 30 3 2.2 20 2 1.28 -55 to 150 D...