AO4916A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO4916A uses...
AO4916A Dual N-Channel Enhancement Mode Field Effect
Transistor with
Schottky Diode
General Description
The AO4916A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A
Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard product AO4916A is Pb-free (meets ROHS & Sony 259 specifications). AO4916AL is a Green Product www.DataSheet4U.com ordering option. AO4916A and AO4916AL are electrically identical.
Features Q1
Q2
VDS (V) = 30V VDS(V) = 30V ID = 8.5A (VGS = 10V) ID = 8.5A (VGS = 10V) RDS(ON) < 17mΩ <17mΩ (VGS = 10V) RDS(ON) < 27mΩ <27mΩ (VGS = 4.5V)
SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A
D2 D2 G1 S1/A
1 2 3 4
8 7 6 5
G2 D1/S2/K D1/S2/K D1/S2/K
Q1
D1 K
D2
Q2
SOIC8
G1 S1
A
G2 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward A Current TA=25°C TA=70°C
B
Max Q1 30 ±20 8.5 6.6 30 2 1.28 -55 to 150
Max Q2 30 ±20 8.5 6.6 30 2 1.28 -55 to 150
Units V V A
VGS TA=25°C TA=70°C ID IDM PD TJ, TSTG Symbol VDS IF IFM PD TJ, TSTG
W °C Units V A
Maximum
Schottky 30 3 2.2 20 2 1.28 -55 to 150
Pulsed Diode Forward Current Power Dis...