AO4918A

AO4918A Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in www.DataSheet4U.com parallel with the synchronous MOSFET to boost efficiency further. AO4918A is Pb-free (meets ROHS & Sony 259 specifications). AO4918AL is a Green Product ordering option. AO4918A and AO4918AL are electrically identical. Features Q1 VDS (V) = 30V ID = 9.3A RDS(ON) < 14.5mΩ RDS(ON) < 16mΩ Q2 VDS(V) = 30V ID=8.5A <18mΩ (VGS = 10V) <27mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K D2 Q1 G1 S1 A Q2 G2 S2 SOIC-8 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C Pulsed Drain Current B TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward Current A IDM PD TJ, TSTG Symbol VDS TA=25°C TA=70°C B Max Q1 30 ±12 9.3 7.4 40 2 1.28 -55 to 150 Max Q2 30 ±20 8.5 6.7 30 2 1.28 -55 to 150 Units V V A W °C Units V A Maximum Schottky 30 3 2.2 20 2 1.28 -55 to 150 IF IFM PD TJ, TSTG Pulsed Diode Forward Current Power Dissipation A TA=25°C TA=70°C Junction and Storage Temperat...